Semiconductor device

ABSTRACT

For example, one memory cell is configured using two memory cell transistors and one phase change element by disposing a plurality of diffusion layers in parallel to a bit-line, disposing gates between the diffusion layers so as to cross the bit-line, disposing bit-line contacts and source contacts alternately to the plurality of diffusion layers arranged in a bit-line direction for each diffusion layer, and providing a phase change element on the source contact. Also, the phase change element can be provided on the bit-line contact instead of the source contact. By this means, for example, increase in drivability of the memory cell transistors and reduction in area can be realized.

This application is a continuation of U.S. patent application Ser. No.13/345,231, filed Jan. 6, 2012, which is a continuation of U.S. patentapplication Ser. No. 12/774,476, filed May 5, 2010, now U.S. Pat. No.8,116,128, which is a continuation of U.S. patent application Ser. No.11/596,705, filed Oct. 29, 2007, now U.S. Pat. No. 7,742,330, which is aU.S. National Phase application of PCT/JP2005/009171, filed May 19,2005, which claims priority from JP 2004-154752, filed May 25, 2004, thecontents of which are hereby incorporated by reference into thisapplication.

TECHNICAL FIELD

The present invention relates to a semiconductor device. Moreparticularly, it relates to a technology effectively applied to asemiconductor device having a high density integrated memory circuit, alogic embedded memory including a memory circuit and a logic circuitprovided on the same semiconductor substrate, or an analog circuit whichis formed of a phase change material.

BACKGROUND ART

In recent years, development of a memory (a phase change memory) using aresistance element made of a phase change material has been advanced forobtaining a fast and highly integrated non-volatile memory, and such amemory is described in, for example, Non-Patent Document 1. As shown inFIG. 58, the phase change memory is a non-volatile memory in which adifference in resistance value between an amorphous state (reset) of aphase change material and a polycrystalline state (set) thereof isstored as data. When the amorphous state (reset) or the polycrystallinestate (set) is to be stored, an electric pulse is used to cause atemperature change with respect to time as shown in FIG. 57, therebygenerating the phase transition between the amorphous state (reset) andthe polycrystalline state (set).

Note that a high resistance value of the amorphous state and a lowresistance value of the polycrystalline state of a phase change materialdo not require a complete amorphous state and a complete polycrystallinestate, and it is important as a storage element that there is asufficient difference between a high resistance state and a lowresistance state. Accordingly, it is possible to take an arbitraryintermediate value between a high resistance state corresponding to thecomplete amorphous state and a low resistance state corresponding to thecomplete polycrystalline state.

As described above, a phase change element changes its phase stateaccording to an electric pulse. As shown in FIG. 57, it is necessary forperforming a reset operation to supply large current flow in a shortperiod of time to perform rapid cooling. On the contrary, it isnecessary for performing a set operation to supply the flow of a currentless than that in the reset operation for a relatively long time toperform cooling.

In addition, in the read operation, ‘0’ state and ‘1’ state of a phasechange memory corresponding to the reset and the set, respectively, areread by sensing a rate of a voltage drop of a bit-line by using areading voltage.

-   Non-Patent Document 1: 2002 IEEE International Solid-State Circuits    Conference Digest of Technical Papers, pp. 202-203

DISCLOSURE OF THE INVENTION Problem to be Solved by the Invention

Incidentally, from the examination result about the technology for aphase change memory such as described above by the inventors of thepresent invention, the following matters have been found.

It is necessary to generate a predetermined heat quantity in order tocause phase change of a phase change element from a polycrystallinestate to an amorphous state. As shown in FIG. 57, Joule heat generatedwhen a predetermined amount of current is caused to flow for apredetermined time is utilized in order to electrically cause the phasechange. Considering a stable memory operation, it is necessary toarrange selection switches in series with the phase change element.Also, it is important to reduce of a memory size in order to realize alarge capacity.

However, there is a possibility that a drivability of the selectionswitch is lowered and a current for obtaining sufficient heat quantitycannot be obtained due to the reduction of the memory size. Therefore,when the memory cell size is increased, the following problem occurs ina memory cell structure in the conventional art such as shown in FIG.59.

FIG. 59 is a sectional view of one example of a memory cell structure ofa phase change memory in a semiconductor device of the conventional artexamined as a background of the present invention. In FIG. 59, twomemory cell transistors (selection switches) are formed in a portionsandwiched between two isolation regions STI on a p type well PWEL. Onediffusion layer L in the two memory cell transistors is shared andconnected to a bit-line BL via a bit-line contact BC. Further, the otherdiffusion layers L of the two memory cell transistors are connected tothe ends of individual phase change elements PCR via respective sourcecontacts SC, and the other ends of the phase change elements PCR areconnected to a source wiring layer SL. In such a layout, one memory cellis composed of one memory cell transistor and one phase change elementPCR.

In such a memory cell structure of the conventional art, however, when awidth (a depth direction of FIG. 59) of a gate G of a memory celltransistor is expanded in order to obtain sufficient heat quantity, theisolation region STI disposed in parallel to the gate G (word line) isalso expanded in a width direction of the gate G. Accordingly, an areaof the memory cell is largely expanded.

In general, there is a concern about stability at a reading/writingoperation time in the phase change memory. That is, when rewriting froma reset state (an amorphous state) with high resistance to a set state(a polycrystalline state) with low resistance is performed using anelectric pulse, a small amount of current flows in a rewriting initialstage due to the high resistance but a low resistance state occurs afterphase change and an amount of current increases rapidly. Accordingly,there is a fear that the phase change element is changed to a highresistance state due to heat generation caused by increased currentagain. Further, when integration density is increased in a phase changememory, a distance between memory cells is reduced, and due to heatgeneration in a memory cell where a reset/set operation is performed,data destruction may occur in memory cells adjacent thereto.

The above and other objects and novel characteristics of the presentinvention will be apparent from the description of this specificationand the accompanying drawings.

Means for Solving the Problem

The typical ones of the inventions disclosed in this application will bebriefly described as follows.

A semiconductor device according to the present invention comprises abit-line; a first transistor and a second transistor disposed in anextending direction of the bit-line; and a memory element which retainsdata based on electric resistance, wherein a first node of the firsttransistor, a first node of the second transistor and one end of thememory element are mutually connected, and a second node of the firsttransistor and a second node of the second transistor are independentlyconnected to the bit-line, respectively. That is, in this structure, twomemory cell transistors are connected in parallel between the memoryelement and the bit-line. Note that the memory element includes the onecontaining chalcogenide material or the like, for example.

The semiconductor device according to the present invention comprises: abit-line; a first transistor and a second transistor which are disposedin an extending direction of the bit-line; a memory element whichretains data utilizing electric resistance; and a source electrode,wherein a second node of the first transistor, a second node of thesecond transistor, and one end of the memory element are mutuallyconnected, the other end of the memory element is connected to thebit-line, and a first node of the first transistor and a first node ofthe second transistor are independently connected to source electrodes,respectively. More specifically, in this structure, two memory celltransistors are connected in parallel between the memory elementconnected to the bit-line and the source electrode.

By using two memory cell transistors like the above structure, adrivability of the memory cell transistor can be increased.

By using such two memory cell transistors, it becomes possible to changea driving current at a write operation and a read operation to and froma memory element according to necessity. More specifically, for example,a driving current can be adjusted by using two memory cell transistorsto perform a read operation and a write operation or by using either oneof the memory cell transistors to perform a read operation or a writeoperation.

As one example of such an operation, for example, when one memory celltransistor is driven at the time of a read operation and a set writeoperation and two memory cell transistors are driven at the time of areset write operation in a phase change memory, stability of a set writeoperation, prevention of data destruction at the time of read operation,and the like can be realized.

Also, a semiconductor device according to the present inventioncomprises: a bit-line; a plurality of memory elements which retain databased on a resistance value; a plurality of transistors disposed in adirection parallel to the bit-line and including first diffusion layersand second diffusion layers, respectively; first contacts connecting thefirst diffusion layers and the plurality of memory elements; secondcontacts connecting the second diffusion layers and the bit-line; aplurality of word lines connected to gates of the plurality oftransistors; and a plurality of memory cells disposed at predeterminedcrossing points between the bit-line and the plurality of word lines,wherein the first contacts and the second contacts are alternatelydisposed in a direction parallel to the bit-line, and each of theplurality of memory cells has one memory element and two transistors.

More specifically, one memory cell has two word lines connected to twotransistors, a first diffusion layer and a first contact which arepositioned between the two word lines and to which a memory element isconnected, and a second diffusion layer and a second contact which arepositioned on both sides of the two word lines and to which the bit-lineis connected. Further, the second diffusion layer and the second contactare shared by memory cells adjacent in a bit-line direction.

In such a structure, since an isolation region is not used between thetransistors adjacent in the bit-line direction and between the memorycells, it is possible to reduce a circuit area in addition to theimprovement of drivability of the memory cell transistor as describedabove.

Incidentally, the first contact can be sectioned to a third contact incontact with the first diffusion layer and a fourth contact connected tothe third contact and in contact with the memory element. In this case,it is desirable that a contact area between the fourth contact and thememory element is made smaller than a contact area between the thirdcontact and the first diffusion layer. By this means, it becomespossible to reduce a write current.

Also, a semiconductor device according to the present inventioncomprises: a first memory cell array including a first bit-line; asecond memory cell array including a second bit-line and a thirdbit-line; a sense amplifier block disposed between the first memory cellarray and the second memory cell array; and a read bit-line and areference bit-line included in the sense amplifier block, wherein, in aread operation, the first bit-line and the read bit-line are connectedto each other and the second bit-line and the third bit-line aremutually connected to the reference bit-line. By this means, a circuitfor setting a potential level at the time of read operation can besimplified, and the circuit area can be reduced.

Effect of the Invention

The effects obtained by typical aspects of the present invention will bebriefly described below. That is, high speed operation or highintegration of a semiconductor device can be realized.

BRIEF DESCRIPTIONS OF THE DRAWINGS

FIG. 1 is a layout diagram showing one example of a configuration of amemory cell array in a phase change memory in a semiconductor deviceaccording to a first embodiment of the present invention;

FIG. 2 is a layout diagram showing a modified example of FIG. 1;

FIG. 3 is a circuit diagram showing one example of a configuration of amemory cell array in a phase change memory in the semiconductor deviceaccording to the first embodiment of the present invention;

FIG. 4 is a circuit diagram showing one example of a configuration of amemory cell array different from that in FIG. 3 in the phase changememory in the semiconductor device according to the first embodiment ofthe present invention;

FIG. 5 is a layout diagram showing another modified example of FIG. 1;

FIG. 6 is a layout diagram showing another modified example of FIG. 1;

FIG. 7 is a layout diagram showing another modified example of FIG. 1;

FIG. 8 is a layout diagram showing another modified example of FIG. 1;

FIG. 9 is a layout diagram showing one example of a configuration of amemory cell array in a phase change memory in the semiconductor deviceaccording to a second embodiment of the present invention;

FIG. 10 is a layout diagram showing a modified example of FIG. 9;

FIG. 11 is a circuit diagram showing one example of a configuration of amemory cell array in the phase change memory in the semiconductor deviceaccording to the second embodiment of the present invention;

FIG. 12 is a circuit diagram showing one example of a configuration of amemory cell array different from that in FIG. 11 in the phase changememory in the semiconductor device according to the second embodiment ofthe present invention;

FIG. 13 is a layout diagram showing another modified example of FIG. 9;

FIG. 14 is a layout diagram showing another modified example of FIG. 9;

FIG. 15 is a layout diagram showing another modified example of FIG. 9;

FIG. 16 is a diagram showing a configuration example of a part of blocksof a whole block configuration of a phase change memory including thememory cell array according to the first or second embodiment in asemiconductor device according to a third embodiment of the presentinvention;

FIG. 17A is a schematic diagram showing one example of a connectingmethod of a memory cell array and a sub-word driver block in the phasechange memory shown in FIG. 16;

FIG. 17B is a schematic diagram showing another example of a connectingmethod of a memory cell array and a sub-word driver block in the phasechange memory shown in FIG. 16;

FIG. 17C is a schematic diagram showing still another example of aconnecting method of a memory cell array and a sub-word driver block inthe phase change memory shown in FIG. 16;

FIG. 18A is a schematic diagram showing one example of a connectingmethod of a memory cell array and a sense-amplifier block in the phasechange memory shown in FIG. 16;

FIG. 18B is a schematic diagram showing another example of a connectingmethod of a memory cell array and a sense-amplifier block in the phasechange memory shown in FIG. 16;

FIG. 18C is a schematic diagram showing still another example of aconnecting method of a memory cell array and a sense-amplifier block inthe phase change memory shown in FIG. 16;

FIG. 19 is a circuit block diagram showing one example of aconfiguration of the sense-amplifier block in the phase change memoryshown in FIG. 16;

FIG. 20A is a circuit diagram showing one example of a detailedconfiguration of a bit-line selector circuit in the sense-amplifierblock shown in FIG. 19;

FIG. 20B is a circuit diagram showing one example of a detailedconfiguration of a precharge circuit in the sense-amplifier block shownin FIG. 19;

FIG. 20C is a circuit diagram showing one example of a detailedconfiguration of an input/output circuit in the sense-amplifier blockshown in FIG. 19;

FIG. 20D is a circuit diagram showing one example of a detailedconfiguration of a cross-coupling amplifier in the sense-amplifier blockshown in FIG. 19;

FIG. 21A is a circuit diagram showing one example of a detailedconfiguration of a write driver in the sense-amplifier block shown inFIG. 19;

FIG. 21B is a circuit diagram showing another example of a detailedconfiguration of a write driver in the sense-amplifier block shown inFIG. 19;

FIG. 21C is a circuit diagram showing still another example of adetailed configuration of a write driver in the sense-amplifier blockshown in FIG. 19;

FIG. 21D is a circuit diagram showing still another example of adetailed configuration of a write driver in the sense-amplifier blockshown in FIG. 19;

FIG. 22 is a waveform diagram showing one example of an operation whenread is performed from a standby state using the sense amplifier blockshown in FIG. 19 to FIG. 21

FIG. 23 is a waveform diagram showing one example of read and writeoperations of a memory array in the phase change memory shown in FIG.16;

FIG. 24 is a waveform diagram showing another example of read and writeoperations of a memory array in the phase change memory shown in FIG.16;

FIG. 25 is a waveform diagram showing still another example of read andwrite operations of a memory array in the phase change memory shown inFIG. 16;

FIG. 26 is a waveform diagram showing still another example of read andwrite operations of a memory array in the phase change memory shown inFIG. 16;

FIG. 27 is a waveform diagram showing still another example of read andwrite operations of a memory array in the phase change memory shown inFIG. 16;

FIG. 28 is a plan view for describing a step in one example of amanufacturing method of the semiconductor device according to the firstembodiment of the present invention;

FIG. 29 is a plan view for describing a step subsequent to FIG. 28 inone example of a manufacturing method of the semiconductor deviceaccording to the first embodiment of the present invention;

FIG. 30 is a plan view for describing a step subsequent to FIG. 29 inone example of a manufacturing method of the semiconductor deviceaccording to the first embodiment of the present invention;

FIG. 31 is a plan view for describing a step subsequent to FIG. 30 inone example of a manufacturing method of the semiconductor deviceaccording to the first embodiment of the present invention;

FIG. 32 is a plan view for describing a step subsequent to FIG. 31 inone example of a manufacturing method of the semiconductor deviceaccording to the first embodiment of the present invention;

FIG. 33 is a sectional view showing the principal parts of one exampleof a sectional configuration taken along the line A-A′ in FIG. 2;

FIG. 34 is a sectional view showing the principal parts of one exampleof a sectional configuration taken along the line B-B′ in FIG. 2;

FIG. 35 is a sectional view showing the principal parts of one exampleof a sectional configuration taken along the line C-C′ in FIG. 2;

FIG. 36 is a sectional view showing the principal parts of one exampleof a sectional configuration taken along the line D-D′ in FIG. 10;

FIG. 37 is a sectional view showing the principal parts of anotherexample of a sectional configuration taken along the line A-A′ in FIG.2;

FIG. 38 is a sectional view showing the principal parts of anotherexample of a sectional configuration taken along the line B-B′ in FIG.2;

FIG. 39 is a sectional view showing the principal parts of anotherexample of a sectional configuration taken along the line C-C′ in FIG.2;

FIG. 40 is a sectional view showing the principal parts of anotherexample of a sectional configuration taken along the line D-D′ in FIG.10;

FIG. 41 is a sectional view showing the principal parts of still anotherexample of a sectional configuration taken along the line A-A′ in FIG.2;

FIG. 42 is a sectional view showing the principal parts of still anotherexample of a sectional configuration taken along the line B-B′ in FIG.2;

FIG. 43 is a sectional view showing the principal parts of still anotherexample of a sectional configuration taken along the line C-C′ in FIG.2;

FIG. 44 is a sectional view showing the principal parts of still anotherexample of a sectional configuration taken along the line D-D′ in FIG.10;

FIG. 45 is a sectional view showing the principal parts of still anotherexample of a sectional configuration taken along the line A-A′ in FIG.2;

FIG. 46 is a sectional view showing the principal parts of still anotherexample of a sectional configuration taken along the line B-B′ in FIG.2;

FIG. 47 is a sectional view showing the principal parts of still anotherexample of a sectional configuration taken along the line C-C′ in FIG.2;

FIG. 48 is a sectional view showing the principal parts of still anotherexample of a sectional configuration taken along the line D-D′ in FIG.10;

FIG. 49 is a sectional view showing the principal parts of still anotherexample of a sectional configuration taken along the line A-A′ in FIG.2;

FIG. 50 is a sectional view showing the principal parts of still anotherexample of a sectional configuration taken along the line B-B′ in FIG.2;

FIG. 51 is a sectional view showing the principal parts of still anotherexample of a sectional configuration taken along the line C-C′ in FIG.2;

FIG. 52 is a sectional view showing the principal parts of still anotherexample of a sectional configuration taken along the line D-D′ in FIG.10;

FIG. 53 is a sectional view showing the principal parts of still anotherexample of a sectional configuration taken along the line A-A′ in FIG.2;

FIG. 54 is a sectional view showing the principal parts of still anotherexample of a sectional configuration taken along the line B-B′ in FIG.2;

FIG. 55 is a sectional view showing the principal parts of still anotherexample of a sectional configuration taken along the line C-C′ in FIG.2;

FIG. 56 is a sectional view showing the principal parts of still anotherexample of a sectional configuration taken along the line D-D′ in FIG.10;

FIG. 57 is an explanatory diagram of a rewrite operation pulse of aphase change element;

FIG. 58 is a diagram showing a current-voltage characteristic of a phasechange element;

FIG. 59 is a sectional view showing one example of a memory cellstructure of a phase change memory in a semiconductor device of aconventional art that has been examined as a background of the presentinvention; and

FIG. 60 is a layout diagram showing the same layout as that in FIG. 1where the memory cell is seen from a different viewpoint.

BEST MODE FOR CARRYING OUT THE INVENTION

Hereinafter, embodiments of the present invention will be described indetail with reference to the accompanying drawings. Note that componentshaving the same function are denoted by the same reference symbolsthroughout the drawings for describing the embodiment, and therepetitive description thereof will be omitted.

Also, circuit elements configuring respective blocks in an embodimentare formed on one semiconductor substrate such as single crystal siliconby an integrated circuit technology for a known CMOS transistor(complementary MOS transistor) or the like. Also, a circuit symbol of aMOSFET (metal oxide semiconductor field effect transistor) including noarrow denotes an n type MOSFET (NMOS transistor), and a circuit symbolof a MOSFET including arrow denotes a p type MOSFET (PMOS transistor),so as to distinguish both the MOSFETs from each other. In thisspecification, the description will be made using the MOSFET, and anyinsulating film can be used for a gate oxide film of the MOSFET, andespecially, a FET using a high dielectric constant insulating film canbe used. These FETs are collectively called “MISFET (metal insulatorsemiconductor field effect transistor)”. Hereinafter, the MOSFET iscalled “MOS transistor”.

First Embodiment

FIG. 1 is a layout diagram showing one example of a configuration of amemory cell array in a phase change memory in a semiconductor deviceaccording to a first embodiment of the present invention. The feature ofa layout of a memory cell array MCA shown in FIG. 1 lies in that onememory cell MC is composed of two memory cell transistors Q1 and Q2 andone phase change element PCR (not shown).

The memory cell transistors Q1 and Q2 in the memory cell MC in FIG. 1include gates G connected to word lines WL and share one diffusion layerL (first node) having a source contact SC, and the other diffusionlayers L (second nodes) are connected to bit-lines BL via differentbit-line contacts BC. The source contact SC is connected to one end ofthe phase change element PCR (not shown), and the other end of the phasechange element PCR is connected to a source wiring layer (sourceelectrode) SL (not shown). Also, the diffusion layer L connected to thebit-line BL is shared by memory cells MC adjacent on the same bit-lineBL.

Incidentally, a region of the memory cell transistor including such adiffusion layer L, provided so as to correspond to each bit-line BL andextending in a direction parallel to the bit-line BL is called “activearea (region) AA”. An isolation region STI which is an insulating filmis formed between the active regions AA adjacent in an extendingdirection of the word line WL.

Further, FIG. 60 is a layout diagram showing the same layout as that inFIG. 1 where the memory cell MC is seen from a different viewpoint.Different from FIG. 1, in the memory cell MC shown in FIG. 60, the phasechange element PCR is connected to the bit-line contact BC side.

The memory cell transistors Q1 and Q2 in the memory cell MC shown inFIG. 60 include gates G connected to word lines WL and share onediffusion layer L (second node) having a bit-line contact BC, and theother diffusion layers L (first nodes) are connected to source wiringlayers (source electrodes) SL (not shown) via different source contactsSC. One end of a phase change element PCR (not shown) is connected tothe bit-line contact BC, and the bit-line BL is connected to the otherend thereof. Further, the diffusion layer L connected to the sourceelectrode SL is shared by the memory cells MC adjacent on the samebit-line BL.

As described above, there are two types of viewpoints for the samelayout, where the viewpoint to the memory cell MC shown in FIG. 1corresponds to a circuit diagram shown in FIG. 3 described later, andthe viewpoint to the memory cell MC shown in FIG. 60 corresponds to acircuit diagram shown in FIG. 4 described later. However, since both thelayout diagrams are the same, the layout diagram shown in FIG. 1 will bedescribed below as it corresponds to both the viewpoints.

In FIG. 1, a width (=gate width) of the active region AA (diffusionlayer L) is set to 2.5 F, a width of the isolation region STI is set toF, a wiring pitch of the gate G is set to 2 F, and arrangement pitchesof the active region AA and the bit-line BL are set to 3.5 F. In thiscase, the minimum processing dimension F is set to ½ of the smaller oneof the wiring pitch of the gate G and the wiring pitch of the bit-lineBL. In this configuration, the minimum processing dimension Fcorresponds to ½ of the wiring pitch of the gate G.

Accordingly, the gate width of the memory cell transistor to one phasechange element PCR reaches 5 F=(2.5 F+2.5 F) and an area of the memorycell MC becomes 14 F² because two memory cell transistors Q1 and Q2 areprovided. By expanding the gate width using two memory cell transistorsin this manner, the drivability of the memory cell transistor to onephase change element PCR can be improved.

The gates G of the memory cell transistors are connected to word linesWL provided across a bit-line. In this case, the description will bemade based on the assumption that the memory cell transistor is the NMOStransistor, but it may be a PMOS transistor. However, the use of theNMOS transistor is superior in current drivability and it has theadvantage that a memory cell area required for realizing the samecurrent drivability can be reduced. Bit-line contacts BC (secondcontact) and source contacts SC (first contact) are alternately disposedfor each diffusion layer L in the active region AA, namely, source anddrain regions of a plurality of memory cell transistors disposed inseries. Active regions AA adjacent in an extending direction of the gateG have a similar contact arrangement.

In this case, all contacts disposed between two gates G adjacent in thememory cell array MCA are bit-line contacts BC or source contacts SC.Further, considering one word line WL (gate G), bit-line contacts BC arealigned on one side (first side) thereof, and source contacts (memorycell contacts) SC are aligned on the other side (second side). A centerline of the bit-line contacts BC and a center line of the sourcecontacts SC on the same bit-line BL are positioned so that their centersare deviated in a word line WL direction by 1.5 F. A bit-line BL isdisposed on the bit-line contact BC in parallel to the active region AA.

This layout can be applied to both the cases where the source wiringlayer SL disposed on the source contact SC is disposed above thebit-line BL and the case where the source wiring layer SL is disposedbelow the bit-line BL. When the source wiring layer SL is disposed abovethe bit-line BL in this layout, a margin is formed between the sourcecontact SC and the bit-line BL. Therefore, the short-circuit between thebit-line BL and the source contact SC can be suppressed.

FIG. 2 is a layout diagram showing a modified example of FIG. 1. In thislayout, the gate width of the memory cell transistor to one phase changeelement PCR is 4 F, and the memory cell area is 12 F². Similar to FIG.1, a circuit diagram corresponding to FIG. 2 is represented by FIG. 3and FIG. 4 shown later.

This configuration is different from the configuration shown in FIG. 1in that the arrangement pitches of the bit-line BL and the active regionAA are 3 F, a width of the active region AA is 2 F, and a width of theisolation region STI is F. Therefore, a center line of the bit-linecontacts BC and a center line of the source contacts SC on the samebit-line BL are positioned so that their centers are deviated in a wordline WL direction by F. In this layout, of the two sides of the bit-lineBL in a longitudinal direction, a shape of one side where the sourcecontact SC is positioned is set to be rectangular. Therefore, a space of0.5 F or more is always secured between the source contact SC and thebit-line BL.

This layout is suitable for the case where the source wiring layer SL isdisposed above the bit-line BL. In this case, since a capacitancebetween the bit-line BL and the source contact SC can be reduced,high-speed operation and reduction in power consumption can be realized.Also, since a space of 0.5 F or more is present between the sourcecontact SC and the bit-line BL, an advantage can be obtained that theshort-circuit can be suppressed. Further, it is possible to apply theconfiguration where the source wiring layer SL is disposed below thebit-line BL. The other configuration is similar to that in FIG. 1.

FIG. 33, FIG. 34, and FIG. 35 are sectional views showing the principalparts of an example of a sectional configuration taken along the linesA-A′, B-B′ and C-C′ in FIG. 2, respectively. FIG. 33 includes not only asectional view taken along the line A-A′ but also a sectional viewshowing a part (PMOS transistor and NMOS transistor) of asense-amplifier block SAB of a peripheral circuit region adjacent to thememory cell array MCA. Also, FIG. 33 shows a section between A-A′ ofFIG. 2 connected by a line formed of rectangles so that a section ofcontacts on the diffusion layer L can be seen for a convenience ofexplanation. For simplification, interlayer dielectrics are not shown inrespective figures.

In FIG. 33, the memory cell array MCA is disposed in a p type well PWELcommon to NMOS transistors in a peripheral circuit. Also, the PMOStransistors in the peripheral circuit are disposed in an n type wellNWEL. This configuration corresponds to a structure example where thephase change element PCR is disposed between the source contact SC andthe source wiring layer SL and the phase change elements PCR areseparated for each memory element.

This configuration also corresponds to a structure example where thebit-line contact BC and the source contact SC which are contacts to thediffusion layer L of the memory cell transistor are formed to the gate Gin a self aligned manner. These contacts may be formed through thecontact formation according to a conventional CMOS process. In the caseof the contact formation according to the CMOS process, since it isunnecessary to add a special process, such an advantage can be obtainedthat a process cost can be reduced. On the other hand, when the contactsare formed through the self aligned process, even if distances betweenthe gate G and the contact BC and between the gate G and the sourcecontact SC are reduced, the short-circuit between the gate G and thecontact BC and between the gate G and the source contact SC can beprevented, and the advantage can be obtained that a fine memory cell canbe formed.

As shown in FIG. 33 and FIG. 34, a second bit-line contact BC2 isdisposed on the bit-line contact BC, and the bit-line BL is disposed onthe second bit-line contact BC2. The bit-line contact BC and the secondbit-line contact BC2 can be formed simultaneously. In this case, such anadvantage can be obtained that a process cost can be reduced. Withrespect to the shape of a contact portion between the bit-line contactBC and the diffusion layer L, it is narrowed in a directionperpendicular to the gate G (in a width direction in FIG. 33) and iswidened in a direction parallel to the gate G (in a width direction inFIG. 34). By this means, a contact area can be enlarged and lowresistance can be achieved. As shown in FIG. 34, the bit-line contact BCis disposed on the diffusion layer L on a B′ side in FIG. 2.

On the other hand, as shown in FIG. 33 and FIG. 35, with respect to theshape of a contact portion of the source contact SC with the diffusionlayer L, it is narrowed in a direction perpendicular to the gate G andis widened in a direction parallel to the gate G like the bit-linecontact BC. As shown in FIG. 35, the source contact SC is disposed onthe diffusion layer L on a C side in FIG. 2.

Also, a lower electrode PLUG which is made of tungsten (W), formed froma stacked structure of W/titanium nitride (TiN), or made of polysiliconto a phase change element PCR is disposed on the source contact SC. Itis desirable that the lower electrode PLUG (fourth contact) is formed tobe smaller in sectional area than the source contact SC (third contact)because of the necessity to reduce a contact area to the phase changeelement PCR.

A phase change element PCR and an upper electrode PL are disposed on thelower electrode PLUG. The phase change element PCR and the upperelectrode PL are separated from an adjacent memory cell MC by aninterlayer dielectric. Further, a second source contact SC2 is disposedon the upper electrode PL, and the source wiring layer SL is connectedto the second source contact SC2. The source wiring layer SL is mutuallyconnected on the memory cell array MCA. Beside this configuration, sucha configuration is also possible that the source wiring layer SL ismutually connected by the memory cells MC arranged in the bit-line BLdirection or the gate G (word line WL) direction.

In the memory cell array MCA shown in FIG. 33, both the bit-line contactBC and the diffusion layer L to which the bit-line contact BC isconnected are shared by adjacent memory transistors and adjacent memorycells MC. Therefore, when compared with the configuration described inFIG. 59 as the conventional art, it is unnecessary to use isolationregions STI at respective portions in the memory cell array MCA and acircuit area can be reduced.

According to the configuration shown in FIG. 33 to FIG. 35 above, notonly the securing of drivability by the two memory cell transistors asdescribed above but also the reduction in the circuit area can beachieved. Further, since phase change elements PCR of the memory cellsMC are electrically and thermally isolated from each other by theinterlayer dielectric, such an advantage can be obtained thatdisturbance to an adjacent memory cell can be reduced. By connecting thememory cell transistor to the bit-line BL side and connecting the phasechange element PCR to the source electrode SL side, application ofdisturbance voltage to a non-selected memory cell when a bit-line BL isdriven can be suppressed.

FIG. 37, FIG. 38, and FIG. 39 are sectional views showing the principalparts of another example of a sectional configuration taken along thelines A-A′, B-B′ and C-C′ in FIG. 2, respectively. The feature of thisstructure lies in that a phase change element PCR and an upper electrodePL are disposed above a bit-line BL, and the phase change element PCR ismutually connected on the memory cell array MCA and the upper electrodePL is utilized as a source wiring layer SL (source electrode), whencompared with the structure shown in FIG. 33 to FIG. 35.

Even when the phase change elements PCR are mutually connected on thememory cell array MCA, writing is performed only on the local portionscorresponding to respective memory cells MC in a region of the phasechange element PCR in practical use. Therefore, the remaining portionsare always in high resistance of amorphous state, and the phase changeelements PCR can be assumed to be substantially separated for respectivememory cells MC.

By connecting the phase change elements PCR mutually on the memory cellarray MCA in this manner, fine processing to the phase change elementsPCR and the upper electrodes PL for each memory cell MC on the memorycell array MCA is not required and the process can be advantageouslyfacilitated. Since the source electrode SL is also used as the upperelectrode PL in this configuration, it is desirable that the upperelectrode PL is used mutually on the memory cell array MCA. Theremaining configuration is similar to that shown in FIG. 33 to FIG. 35.

FIG. 41, FIG. 42, and FIG. 43 are sectional views showing the principalparts of still another example of a sectional configuration taken alongthe lines A-A′, B-B′ and C-C′ in FIG. 2, respectively. When comparedwith the configuration shown in FIG. 33 to FIG. 35, this configurationshows the case where the phase change element PCR, the upper electrodePL, and the source wiring layer SL are disposed below the bit-line BL.

In this configuration, since the phase change elements PCR of the memorycells MC are electrically and thermally isolated from each other by theinterlayer dielectric like the configuration shown in FIG. 33 to FIG.35, such an advantage can be obtained that disturbance to an adjacentmemory cell can be reduced. Also, by disposing the bit-line BL above thesource wiring layer SL, a bit-line BL capacitance can be reduced becauseany adjacent contact is not present like the bit-line BL shown in FIG.35. Accordingly, such an advantage can be obtained that the high-speedoperation and reduction in power consumption can be realized.

Note that FIG. 41 to FIG. 43 show a system where the source wiring layerSL is mutually connected on the memory cell array MCA by the memorycells arranged in the gate G (word line) direction, but application tothe system where the source wiring layer SL is mutually connected by thememory cells arranged in the bit-line BL direction and the system wherethey are mutually connected on the memory cell array MCA is alsopossible. Also, the bit line contact BC and the second bit-line contactBC2 can be formed simultaneously. In this case, simplification of aprocess step can be achieved. The remaining configuration is similar tothat in FIG. 33 to FIG. 35 described above.

FIG. 45, FIG. 46, and FIG. 47 are sectional views showing the principalparts of still another example of a sectional configuration taken alongthe lines A-A′, B-B′ and C-C′ in FIG. 2, respectively. The feature ofthis configuration lies in that the phase change element PCR isconnected between the bit-line contact BC and the bit-line BL and thesource wiring layer SL is disposed below the bit-line BL.

As shown in these figures, a lower electrode PLUG to the phase changeelement PCR is disposed on the bit-line contact BC. It is desirable thatthe lower electrode PLUG (fourth contact) is formed to be smaller insectional area than the bit-line contact BC (third contact) because ofthe necessity to reduce a contact area to the phase change element PCR.Further, the phase change elements PCR and the upper electrodes PLseparated for respective memory cells MC are disposed on the lowerelectrode PLUG. Also, the second bit-line contact BC2 is disposed on theupper electrode PL and the bit-line BL is connected to the second bitcontact BC2. On the other hand, the second source contact SC2 isdisposed on the source contact SC, and the source wiring layer SL isconnected to the second source contact SC2.

In this configuration, since the phase change elements PCR of the memorycells MC are electrically and thermally isolated from each other by theinterlayer dielectric, such an advantage can be obtained thatdisturbance to an adjacent memory cell can be reduced. Also, bydisposing the bit-line BL above the source wiring layer SL, a bit-lineBL capacitance can be reduced because any adjacent contact is notpresent like the bit-line BL shown in FIG. 35. Accordingly, such anadvantage can be obtained that the high-speed operation and reduction inpower consumption can be realized.

Note that FIG. 45 to FIG. 47 show the system where the source wiringlayer SL is mutually connected on the memory cell array MCA, butapplication to the system where the source wiring layer SL is mutuallyconnected by the memory cells arranged in the word line WL direction andthe system where it is mutually connected by the memory cells arrangedin the bit-line BL direction is also possible. The remainingconfiguration is similar to that shown in FIG. 33 to FIG. 35 describedabove.

FIG. 49, FIG. 50, and FIG. 51 are sectional views showing the principalparts of still another example of a sectional configuration taken alongthe lines A-A′, B-B′ and C-C′ in FIG. 2, respectively. The feature ofthis configuration lies in that that the phase change element PCR isconnected between the bit-line contact BC and the bit-line, the phasechange element PCR is disposed so as to be continuous to a lower layerbelow the bit-line BL, and the source wiring layer SL is disposed belowthe bit-line BL.

As shown in these figures, a lower electrode PLUG to the phase changeelement PCR is disposed on the bit-line contact BC. It is desirable thatthe lower electrode PLUG is formed to be smaller in sectional area thanthe bit-line contact BC because of the necessity to reduce a contactarea to the phase change element PCR. Further, the phase change elementPCR, the upper electrode PL, and the bit-line BL are stacked on thelower electrode PLUG, and these stacked films are processed to a shapesimilar to the bit line BL. On the other hand, the second source contactSC2 is disposed on the source contact SC and the source wiring layer SLis disposed on the second source contact SC2.

In this configuration, since an arrangement pattern of the phase changeelements PCR becomes the same as the bit-line BL, a process step can besimplified. Also, since the phase change elements PCR are electricallyand thermally isolated between adjacent bit-lines BL by the interlayerdielectric, such an advantage can be obtained that disturbance toadjacent memory cells on the same word line WL can be reduced. Also, bydisposing the bit-line BL above the source wiring layer SL, a bit-lineBL capacitance can be reduced because any adjacent contact is notpresent like the bit-line BL shown in FIG. 35.

Note that FIG. 49 to FIG. 51 show the system where the source wiringlayer SL is mutually connected on the memory cell array MCA, butapplication to the system where the source wiring layer SL is mutuallyconnected by the memory cells MC arranged in the word line WL directionand the system where it is mutually connected by the memory cellsarranged in the bit-line BL direction is also possible. Furthermore, inthese figures, the source contact SC and the second source contact SC2are formed between the diffusion layer L and the source wiring layer SL,and layers of the source wiring layer SL to the diffusion L may beformed by one step. In this case, such an advantage can be obtained thatthe process step can be simplified. The remaining configuration issimilar to that in FIG. 33 to FIG. 35 described above.

FIG. 53, FIG. 54, and FIG. 55 are sectional views showing the principalparts of still another example of a sectional configuration taken alongthe lines A-A′, B-B′ and C-C′ in FIG. 2, respectively. The feature ofthis configuration lies in that the phase change element PCR isconnected between the bit-line contact BC and the bit-line BL and thesource wiring layer SL is disposed above the bit-line BL.

As shown in these figures, a lower electrode PLUG to the phase changeelement PCR is disposed on the bit-line contact BC. It is desirable thatthe lower electrode PLUG is formed to be smaller in sectional area thanthe bit-line contact BC because of the necessity to reduce a contactarea to the phase change element PCR. Further, the phase change elementPCR and the upper electrode PL are disposed on the lower electrode PLUG.The upper electrode PL is connected to the bit-line BL via the secondbit-line contact BC2. On the other hand, one end of the second sourcecontact SC2 is connected to the source contact SC. Also, the other endof the second source contact SC2 is positioned above the bit-line BL andthe source wiring layer SL mutually formed on the memory cell array MCAis connected to the other end.

In this configuration, since the phase change element PCR of the memorycell MC is electrically and thermally isolated by the interlayerdielectric, the second source contact SC2, and the like, such anadvantage can be obtained that disturbance to an adjacent memory cell MCcan be reduced.

Note that FIG. 53 to FIG. 55 show the system where the source wiringlayer SL is mutually connected on the memory cell array MCA, butapplication to the system where the source wiring layer SL is mutuallyconnected by the memory cells arranged in the word line WL direction andthe system where it is mutually connected by the memory cells arrangedin the bit-line BL direction is also possible. Especially, when thesource wiring layer SL is mutually connected by the memory cells on thesame word line WL or on the same bit-line BL, a capacitance of thesource wiring layer SL can be reduced. Therefore, application to anoperation system for driving the source wiring layer SL is facilitated.The remaining configuration is similar to that in FIG. 33 to FIG. 35described above.

Next, one example of a manufacturing method of the memory cell array MCAdescribed above will be described. Note that the case of the layoutstructure shown in FIG. 2 having a sectional structure shown in FIG. 33to FIG. 35 will be described as an example with reference to FIG. 28 toFIG. 32. FIG. 28 to FIG. 32 are plan views for describing the steps inthe example of a manufacturing method of a semiconductor deviceaccording to the first embodiment of the present invention,respectively.

First, shallow trench isolation regions STI as shown in FIG. 28 areformed in a semiconductor substrate. A region sandwiched between theisolation regions STI forms an active region AA. Subsequently, impurityions are implanted in the active regions AA in order to form a well.Next, after a gate oxide film is formed, polysilicon (poly-Si) isdeposited as a gate electrode through a conventional CVD (chemical vapordeposition). Impurities with a desired polarity are implanted in thepolysilicon of the gate electrode, and TiN and W is sputtered so as toreduce the word line resistance. TiN is sputtered for suppressingsilicide reaction between polysilicon and W, and tungsten nitride (WN)can be used instead of TiN.

Next, silicon nitride (SiN) is deposited on the gate electrode throughthe CVD for self-aligning contact. Next, a gate G is formed byprocessing the stacked layers of SiN/W/TiN/poly-Si through aconventional dry etching. In this manner, a plan view such as shown inFIG. 29 is obtained. Note that a wiring pitch of the gate G is set to 2F.

Next, n type impurities are implanted on the active region AA with usinga resist mask so as to form a diffusion layer L of a memory celltransistor. Next, an insulating film is deposited through the CVD andthe surface thereof is planarized. Then, plug holes with a diameter ofabout the minimum processing dimension for the bit-line contact BC andthe source contact SC are opened with using the resist as a mask,thereby exposing a surface of the diffusion layer L formed on thesemiconductor substrate. Subsequently, plugs for the bit-line contact BCand the source contact SC are formed. Any materials such as poly-Si, W,TiN, and the like can be used for the plug. After the plug material isdeposited and the planarization is performed through CMP, a plan viewsuch as shown in FIG. 30 can be obtained.

Next, after a silicon oxide film is deposited through the CVD, anopening for the second bit-line contact BC2 is formed on the bit-linecontact BC. Subsequently, an electrode material is embedded in thesecond bit-line contact BC2 to form a plug. A stacked film of W/TiN canbe used for the plug material besides the TiN plug. Next, W used for thebit-line BL is sputtered and a bit-line BL is formed through lithographyand dry-etching. At this time, in order to prevent the short-circuitwith the bit-line BL when a contact of a lower electrode PLUG formed onthe source contact SC is opened later, the bit-line BL may be thinned tohave a size equal to or less than the minimum processing dimension.Then, a plan view such as shown in FIG. 31 can be obtained. In FIG. 31,the bit-line contact BC which is positioned below the bit-line BL isshown by a broken line for the convenience of explanation.

Next, the lower electrode PLUG of the phase change element PCR isformed. First, an oxide film as an interlayer dielectric is deposited,planarization is performed through CMP process, and a plug hole for alower electrode PLUG is formed through the conventional lithography.Thereafter, W or W/TiN stacked film, or the like is deposited in theopening to form the lower electrode PLUG. FIG. 32 shows an example wherethe lower electrode PLUG is formed on the source contact SC. The lowerelectrode PLUG (fourth contact) is designed to have a contact diametersmaller than a source contact SC (third contact) in order to reduce acontact area to a phase change element PCR formed later for the purposeof reducing the rewrite current.

Thereafter, chalcogenide material is deposited as a material for thephase change element PCR. In this case, as the chalcogenide material, amaterial containing Te such as germanium antimony tellurium (GeSbTe) isused. Further, an upper electrode PL is formed and device isolation isperformed for each memory cell MC. Then, a second source contact SC2 isopened to the upper electrode PL and a plug is formed. Further, bydisposing a source wiring layer SL in a plate shape on an upper portionof the memory cell array MCA above the plug, a desired structure can beobtained.

As described above, contact formation may be performed through aconventional CMOS process without using a self-aligned contact to thebit-line contact BC and the source contact SC described above. Also,silicidation effective in resistance reduction may be performed to thegate G. Further, the silicidation can be applied to the diffusion layerL for resistance reduction of the diffusion layer and resistancereduction of the contact.

Next, one example of the circuit diagram corresponding to the layoutshown in FIG. 1 and FIG. 2 described above is shown in FIG. 3 and FIG.4. FIG. 3 is a circuit diagram showing one example of a circuit of amemory cell array in a phase change memory in the semiconductor deviceof the first embodiment of the present invention. FIG. 4 is a circuitdiagram showing one example of a circuit of a memory cell arraydifferent from FIG. 3 in a phase change memory in the semiconductordevice of the first embodiment of the present invention.

As show in FIG. 3, the memory cell MC has memory cell transistors Q1 andQ2 connected in series and a phase change element PCR whose one end isconnected to an intermediate node between the memory cell transistors Q1and Q2. The memory cell transistors Q1 and Q2 may be NMOS transistors orPMOS transistors. In this configuration, the phase change element PCR isdisposed on the source contact SC in FIG. 1 and FIG. 2 as describedabove. Sectional configurations thereof are shown in FIGS. 33 to 35,FIGS. 37 to 39, FIGS. 41 to 43, or the like as described above.

The gates of the memory cell transistors Q1 and Q2 are connected to wordlines WL3 and WL4 adjacent thereto, respectively. The source or thedrain of the memory cell transistor Q1 to which the phase change elementPCR is not connected is connected to a bit-line BL1 via a bit-linecontact BC. As understood from FIG. 1, FIG. 2, and FIG. 3, the bit-linecontact BC is shared by the adjacent memory cell transistors.

Similarly, the source or the drain of the memory cell transistor Q2 towhich the phase change element PCR is not connected is connected to thebit-line BL1 via a bit-line contact BC different from that of the memorycell transistor Q1, and the bit-line contact BC is shared by theadjacent memory cell transistors. A side of the phase change element PCRto which the memory cell transistors Q1 and Q2 are not connected isconnected to the source electrode SL.

The wiring structure of the source electrode SL may be configured usinga plate disposed on the memory cell array MCA as shown in FIG. 33 toFIG. 35 and FIG. 37 to FIG. 39 described above or may be configured as ashared line to which the memory cells MC arranged in the bit-line BLdirection or in the word line WL direction are connected as shown inFIG. 41 to FIG. 43. When the source electrode SL is configured on thememory cell array MCA using a common plate, since it is unnecessary toperform fine processing on the memory cell array MCA, the process isfacilitated. Also, since parasitic capacitance is large, such anadvantage can be obtained that power source fluctuation of the sourceelectrode can be suppressed and power source nose which causes a problemat the time of operation can be reduced.

On the other hand, when the source electrode SL is configured using awire to which the memory cells MC arranged in the bit-line BL directionor the word line WL direction are mutually connected, a wire capacitanceof each source electrode SL is reduced compared with that in the plateconfiguration. Therefore, when the source electrodes SL are driven,high-speed driving can be facilitated, and high-speed operation andreduction in power consumption can be realized. Especially, since thesource electrodes SL are mutually connected for each bit-line BL, suchan advantage can be obtained that only specific memory cells MC can beselected in a read or write operation and unnecessary consumption ofoperation current in non-selected memory cell MS can be reduced. Also,the configuration where the source electrodes SL are mutually connectedin parallel to the word line WL is suitable for an operation forrewriting many memory cells MC simultaneously.

FIG. 4 shows a configuration where the phase change element PCR isdisposed on the bit line contact BC and the source electrode SL isdisposed on the source contact SC of FIG. 1 and FIG. 2 as describedabove. The sectional structure thereof is shown in FIG. 45 to FIG. 47,FIG. 49 to FIG. 52, and FIG. 53 to FIG. 55.

Also in this configuration, the memory cell MC is composed of two memorycell transistors Q1 and Q2 and a phase change element PCR. Similar tothe case shown in FIG. 3, the transistors Q1 and Q2 may be NMOStransistors or PMOS transistors. In FIG. 4, one end of the phase changeelement PCR is connected between the memory cell transistors Q1 and Q2connected in series, and the other end of the phase change element PCRis connected to the bit-line BL1. The sources or the drains of thememory cell transistors Q1 and Q2 to which the phase change element PCRis not connected are connected to the source electrodes SL via differentcontacts. The configuration of the source electrode SL is similar tothat shown in FIG. 3 described above.

Next, modified examples of the layout shown in FIG. 1 and FIG. 2described above will be described. FIG. 5, FIG. 6, and FIG. 7 are layoutdiagrams showing modified examples of the layout shown in FIG. 1.

In the layout shown in FIG. 5, a gate width of a memory cell transistorto one phase change element PCR is 4 F, and a memory cell area is 12 F².A circuit diagram thereof is shown in FIG. 3 or FIG. 4 like that shownin FIG. 1. In this configuration, similar to that shown in FIG. 4, anarrangement pitch of the active region AA is 3 F, a width of the activeregion AA is 2 F, and a width of the isolation region STI is F.Therefore, a center line of the bit-line contacts BC and a center lineof the source contacts SC on the same bit-line BL are positioned so thattheir centers are deviated in a word line WL direction by F.

When compared with the layout in FIG. 2, since the bit-line BL is formedin a straight line in this layout, such an advantage can be obtainedthat resolution and patterning utilizing lithography is facilitated.Also, in this layout, when the source wiring layer SL is disposed abovethe bit-line BL, it is desirable to form a contact connecting from thesource contact SC to the source wiring layer SL by using a contact whichis self-aligned to the bit-line BL. Also, application to a configurationwhere the source wiring layer SL is disposed below the bit-line BL isalso possible. The remaining configuration is similar to that shown inFIG. 1.

In the layout shown in FIG. 6, a gate width of a memory cell transistorto one phase change element PCR is 3 F, and a memory cell area is 10 F².A circuit diagram thereof is shown in FIG. 3 or FIG. 4 like that shownin FIG. 1. In this configuration, arrangement pitches of the bit-line BLand the active region AA are 2.5 F, a width of the active region AA is1.5 F, and a width of the isolation region STI is F. Therefore, a centerline of the bit-line contacts BC and a center line of the sourcecontacts SC on the same bit-line BL are positioned so that their centersare deviated in a word line WL direction by 0.5 F. By forming a shape ofone side of the bit-line BL in a rectangular shape, it is possible tobypass the source contacts SC while being connected to the bit-linecontacts BC.

In this layout, similar to that in FIG. 5, when the source wiring layerSL is disposed above the bit-line BL, it is desirable to form a contactconnecting from the source contact SC to the source wiring layer SL byusing a contact which is self-aligned to the bit-line BL. Also,application to a configuration where the source wiring layer SL isdisposed below the bit-line BL is also possible. The remainingconfiguration is similar to that shown in FIG. 1.

In the layout shown in FIG. 7, a gate width of a memory cell transistorto one phase change element PCR is 2 F, and a memory cell area is 8 F².A circuit diagram thereof is shown in FIG. 3 or FIG. 4 like that shownin FIG. 1. In this configuration, arrangement pitches of the bit-line BLand the active region AA are 2 F, a width of the active region AA is F,and a width of the isolation region STI is F. The active region AA isdeviated upward and downward by 0.5 F at a crossing region with the wordline WL and it is formed in a wave shape with a cycle of 4 F. Therefore,a center line of the bit-line contacts BC and a center line of thesource contacts SC on the same bit-line BL are positioned so that theircenters are deviated in the word line direction by 0.5 F.

The bit-line BL is also arranged so as to be deviated upward anddownward by 0.5 F at the crossing region with the word line WL like theactive region AA and it is formed in a wave shape with a cycle of 4 F.Here, by disposing the bit-line BL in an opposite phase to the activeregion AA, it becomes possible to bypass the source contacts SC whilebeing connected to the bit-line contacts BC.

In this layout, similar to those shown in FIG. 5 and FIG. 6, when thesource wiring layer SL is disposed above the bit-line BL, it isdesirable to form a contact connecting from the source contact SC to thesource wiring layer SL by using a contact which is self-aligned to thebit-line BL. Also, application to a configuration where the sourcewiring layer SL is disposed below the bit-line BL is also possible. Theremaining configuration is similar to that shown in FIG. 1.

In the layout shown in FIG. 8, a gate width of a memory cell transistorto one phase change element PCR is 2 F, and a memory cell area is 8 F².A circuit diagram thereof is shown in FIG. 3 or FIG. 4 like that shownin FIG. 1. In this configuration, similar to that in FIG. 7, anarrangement pitch of the active region AA is 2 F, a width of the activeregion AA is F, and a width of the isolation region STI is F. Whencompared with FIG. 7, both the active region AA and the bit-line BL aredisposed in a straight line, and the bit-line BL is formed on the activeregion AA. A center line of the bit-line contacts BC and a center lineof the source contacts SC on the same bit-line BL are disposed so thatthe centers thereof coincide with each other in the word line WLdirection. This layout is suitable for the case where the source wiringlayer SL is disposed below the bit-line BL. The remaining configurationis similar to that shown in FIG. 1.

Second Embodiment

FIG. 9 is a layout diagram showing one example of a memory cell array ina phase change memory in a semiconductor device according to a secondembodiment of the present invention. Also in the layout of a memory cellarray MCA shown in FIG. 9, similar to the case shown in FIG. 1, onememory cell MC is composed of two memory cell transistors and one phasechange element PCR (not shown). Further, similar to FIG. 1, a gate widthof the memory cell transistor to one phase change element PCR is 5 F anda memory cell area is 14 F².

In this configuration, however, arrangement of the bit-line contacts BCand the source contacts SC is shifted in the bit line BL direction by alength corresponding to one diffusion layer L between the active regionsAA adjacent to each other in the word line WL direction. Therefore,since a distance from the nearest memory cell MC in the word line WLdirection becomes longer than that in FIG. 1, such an advantage can beobtained that the disturbance of a memory cell MC adjacent to a selectedmemory cell MC by the heat generated by the selected memory cell MC canbe reduced. As a circuit diagram corresponding to this layout, the casewhere the phase change element PCR is positioned on the side of thesource contact SC and the case where it is positioned on the side of thebit-line contact BC are shown in FIG. 11 and FIG. 12 described later,respectively.

In FIG. 9, a width (=gate width) of an active region AA (diffusion layerL) is set to 2.5 F, a width of an isolation region STI is set to F, awiring pitch of a gate G is set to 2 F, and a wiring pitch of a bit-lineBL is set to 3.5 F. A memory cell MC includes two memory celltransistors composed of two adjacent gates G, a diffusion layer Lpositioned between the two gates G, and two diffusion layers Lpositioned on both sides of the two gates G.

Also, a source contact SC or a bit-line contact BC is provided on thediffusion layer L positioned between the two gates G, and a phase changeelement PCR is connected through either contact. On the other hand, whenthe diffusion layer L positioned between the gates G is the sourcecontact, the bit-line contact BC is provided on the two diffusion layersL positioned on both sides of the two gates G, and when the diffusionlayer L is the bit-line contact BC, the source contact SC is providedthereon. The two gates G are connected to word lines, respectively.

Note that the arrangement of the memory cell MC shown in FIG. 9corresponds to the case where the phase change element PCR is connectedon the source contact. When the phase charge element is connected on thebit-line contact BC, the arrangement of the memory cell MC similar tothe case shown in FIG. 60 described above is adopted. Although thedescription will be made based on the assumption that the two memorycell transistors are NMOS transistors, it is also possible to use PMOStransistors. However, the use of the NMOS transistors is superior incurrent drivability and has an advantage that the memory cell area canbe reduced.

In the active region AA, bit-line contacts BC and source contacts(memory cell contacts) SC are alternately disposed on the diffusionlayer L partitioned by the gate G in the bit-line BL direction. Also,regarding the contacts disposed between the two gates G, the bit-linecontacts BC and the source contacts (memory cell contacts) SC arealternately disposed in the word line WL direction. A center line of thebit-line contacts BC and a center line of the source contacts SC on thesame bit-line BL are positioned so that their centers are deviated in aword line WL direction by 1.5 F. Further, a bit-line BL is disposed onthe bit-line contact BC in parallel to the active region AA.

This layout can be applied to both the case where the source wiringlayer SL is disposed above the bit-line BL and the case where it isdisposed below the bit-line BL. When the source wiring layer SL isdisposed above the bit-line BL in this layout, since a margin is formedbetween the source contact SC and the bit-line BL, the short-circuitbetween the bit-line BL and the source contact SC can be suppressed. Inthis layout, the phase change element PCR is disposed in a layer on thebit contact BC between the bit contact BC and the bit-line BL or it isdisposed in a layer on the source contact SC between the source contactSC and the source wiring layer SL.

FIG. 10 is a layout diagram showing a modified example of FIG. 9. Inthis configuration, arrangement pitches of the bit-line BL and theactive region AA are 3 F, a width of the active region AA is 2 F, and awidth of the isolation region STI is F, similar to the case shown inFIG. 2. Also, similar to the case shown in FIG. 2, the feature of thismodified example lies in that one side of the bit-line BL is formed in arectangular shape so as to be able to secure a space of 0.5 F to thesource contact SC.

This layout can be applied to both the case where the source wiringlayer SL is disposed above the bit-line BL and the case where it isdisposed below the bit-line BL. When the source wiring layer SL isdisposed above the bit-line BL, since a margin is formed between thesource contact SC and the bit-line BL, short-circuit between thebit-line BL and the source contact SC can be suppressed. In this layout,the gate width of the memory cell transistor to one phase change elementPCR is 4 F, and a memory cell area is 12 F². The remaining configurationis similar to that shown in FIG. 9 and a circuit diagram thereof isshown in FIG. 11 or FIG. 12 described later.

Next, one example of a sectional configuration of the layout shown inFIG. 10 will be described.

FIG. 36 is a sectional view showing the principal parts of one exampleof a sectional configuration taken along the line D-D′ in FIG. 10. Inthis case, a sectional configuration taken along the line A-A′ in FIG.10 is as shown in FIG. 33 described in the first embodiment. In FIG. 36,bit-line contacts BC and source contacts SC are alternately arranged ina row in a section D-D′ extending in a direction crossing to a sectionA-A′. This configuration is a structure example where the phase changeelement PCR is disposed between the source contact SC and the sourcewiring layer SL and the phase change elements PCR are separated for eachmemory element.

This configuration corresponds to an example where the bit-line contactBC and the source contact SC that are contacts to the source/drainregion (diffusion layer L) of the memory cell transistor are formed in aself-aligned manner to the gate G. These contacts may be formed throughthe contact formation utilizing a conventional CMOS process or a contactformation utilizing a self-aligned process to a gate G. Especially, whenthe contacts are formed through the self-aligned process, even if adistance between the gates G is shortened, the short-circuit between thecontact and the gate G can be prevented. For simplification, nointerlayer dielectric is shown in respective figures.

As shown in FIG. 36, a second bit-line contact BC2 is disposed on thebit-line contact BC and a bit-line BL is disposed above the secondbit-line contact BC2. With respect to the shape of a contact portionbetween the bit-line contact BC and the diffusion layer L, it isnarrowed in a direction perpendicular to the gate G and is widened in adirection parallel to the gate G. By this means, a contact area can beenlarged and low resistance can be achieved. As shown in FIG. 36, thebit-line contact BC is disposed on the diffusion layer L on a D′ side.

On the other hand, a lower electrode PLUG which is made of tungsten (W),formed from a stacked structure of W/titanium nitride (TiN), or made ofpolysilicon to a phase change element PCR is disposed on the sourcecontact SC. The phase change element PCR and the upper electrode PL aredisposed on the lower electrode PLUG. The phase change element PCR andthe upper electrode PL are separated from an adjacent memory cell MC byan interlayer dielectric, and the upper electrode PL is connected to thesource wiring layer SL via the second source contact SC2.

In this manner, since the phase change element PCR in the memory cell MCis electrically and thermally isolated, such an advantage can beobtained that disturbance to an adjacent memory cell MC can be reduced.Also, by connecting the memory cell transistor to the bit-line BL sideand connecting the phase change element PCR to the source electrode SLside, such an advantage can be obtained that application of disturbancevoltage to a non-selected memory cell MC when the bit-line BL is drivencan be suppressed.

FIG. 40 is a sectional view showing the principal parts of anotherexample of a sectional configuration taken along the line D-D′ in FIG.10. In this case, a sectional configuration taken along the line A-A′ inFIG. 10 is as shown in FIG. 37 described in the first embodiment. Thefeature of this configuration lies in that the phase change element PCRand the upper electrode PL are disposed above the bit-line BL and aremutually connected on the memory cell array MCA, and the upper electrodePL is utilized as the source electrode SL.

By this means, fine processing to the phase change elements PCR and theupper electrodes PL for each memory cell MC on the memory cell array MCAis not required and the process can be advantageously facilitated. Also,since the source electrode SL is also used as the upper electrode PL inthis configuration, it is desirable that the upper electrode PL is usedmutually on the memory cell array MCA. The remaining configuration issimilar to that shown in FIG. 36 and FIG. 37.

FIG. 44 is a sectional view showing the principal parts of still anotherexample of a sectional configuration taken along the line D-D′ in FIG.10. In this case, the sectional configuration taken along the line A-A′in FIG. 10 is as shown in FIG. 41 described in the first embodiment.When compared with the case shown in FIG. 36 and FIG. 40 describedabove, this configuration shows the case where the phase change elementPCR and the upper electrode PL, the second source contact SC2, and thesource wiring layer SL are disposed below the bit-line BL.

In this configuration, similar to the configuration in FIG. 36, sincethe phase change element PCR in the memory cell MC is electrically andthermally isolated by the interlayer dielectric, such an advantage canbe obtained that disturbance to an adjacent memory cell MC can bereduced. Also, by disposing the bit-line BL above the source wiringlayer SL, a bit-line BL capacitance can be reduced because any adjacentcontact is not present like the bit-line BL shown in FIG. 36.Accordingly, such an advantage can be obtained that the high-speedoperation and reduction in power consumption can be realized.

FIG. 36 shows a system where the source wiring layers SL are mutuallyconnected on the memory cell array MCA by the memory cells MC arrangedin the gate G (word line WL) direction, but application to a systemwhere the source wiring layers SL are mutually connected by the memorycells MC arranged in the bit-line BL direction or a system where thesource wiring layers SL are mutually connected on the memory cell arrayMCA is also possible. Further, the bit-line contacts BC and the secondbit-line contacts BC2 can be formed simultaneously. In this case, theprocess step can be simplified. The remaining configuration is similarto that shown in FIG. 36 and FIG. 41 described above.

FIG. 48 is a sectional view showing the principal parts of still anotherexample of a sectional configuration taken along the line D-D′ in FIG.10. In this case, the sectional configuration taken along the line A-A′in FIG. 10 is as shown in FIG. 45 described in the first embodiment. Thefeature of this configuration lies in that the phase change element PCRis connected between the bit-line contact BC and the bit-line BL and thesource wiring layer SL is disposed below the bit-line BL.

A lower electrode PLUG to the phase change element PCR is disposed onthe bit-line contact BC. It is desirable that the lower electrode PLUGis formed to be smaller in sectional area than the bit-line contact BCbecause of the necessity to reduce a contact area to the phase changeelement PCR. Further, the phase change element PCR and the upperelectrode PL are disposed on the lower electrode PLUG. The secondbit-line contact BC2 is disposed on the upper electrode PL and thebit-line BL is connected to the second bit-line contact BC2. On theother hand, the second source contact SC2 is disposed on the sourcecontact SC and the source wiring layer SL is connected to the secondsource contact SC2.

In this configuration, since the phase change element PCR in the memorycell MC is electrically and thermally isolated by the interlayerdielectric, such an advantage can be obtained that disturbance to anadjacent memory cell MC can be reduced. Also, by disposing the bit-lineBL above the source wiring layer SL, a bit-line BL capacitance can bereduced because any adjacent contact is not present like the bit-line BLshown in FIG. 36. Accordingly, such an advantage can be obtained thatthe high-speed operation and reduction in power consumption can berealized. FIG. 48 shows a system where the source wiring layers SL aremutually connected on the memory cell array MCA, but application to botha system where the source wiring layers SL are mutually connected by thememory cells MC arranged in the word line WL direction or a system wherethey are mutually connected by the memory cells MC arranged in thebit-line BL direction is also possible. The remaining configuration issimilar to that shown in FIG. 36.

FIG. 52 is a sectional view showing the principal parts of still anotherexample of a sectional configuration taken along the line D-D′ in FIG.10. In this case, the sectional configuration taken along the line A-A′in FIG. 10 is as shown in FIG. 49 described in the first embodiment. Inthis configuration, the phase change element PCR is connected betweenthe bit-line contact BC and the bit-line BL and the phase changeelements PCR are continuously disposed in the bit-line BL direction. Thefeature of this example lies in that the source wiring layer SL isdisposed below the wiring layer of the bit-line BL.

A lower electrode PLUG to the phase change element PCR is disposed onthe bit-line contact BC. It is desirable that the lower electrode PLUGis formed to be smaller in sectional area than the bit-line contact BCbecause of the necessity to reduce a contact area to the phase changeelement PCR. Further, the phase change element PCR, the upper electrodePL, and the bit-line BL are disposed on the lower electrode PLUG. On theother hand, the second source contact SC2 is disposed on the sourcecontact SC. The source wiring layer SL is disposed on the second sourcecontact SC2.

In this configuration, since an arrangement pattern of the phase changeelement PCR and the upper electrode PL is equal to that of the bit-lineBL, a process step can be simplified. Also, since the phase changeelement PCR is electrically and thermally isolated between the adjacentbit-lines BL by the interlayer dielectric, such an advantage can beobtained that disturbance to an adjacent memory cell MC on the same wordline can be reduced. Further, by disposing the bit-line BL above thesource wiring layer SL, a bit-line BL capacitance can be reduced becauseany adjacent contact is not present like the bit-line BL shown in FIG.36. Accordingly, such an advantage can be obtained that the high-speedoperation and reduction in power consumption can be realized.

FIG. 52 shows a system where the source wiring layers SL are mutuallyconnected on the memory cell array MCA, but application to a systemwhere the source wiring layers SL are mutually connected by the memorycells MC arranged in the word line WL direction or a system where theyare mutually connected by the memory cells MC arranged in the bit-lineBL direction is also possible. Also, in FIG. 52, the source contact SCand the second source contact SC2 are used for the connection of thediffusion layer L and the source wiring layer SL. However, layers of thesource wiring layer SL to the diffusion layer L can be formed in onestep. In this case, such an advantage can be obtained that a processstep is simplified. The remaining configuration is similar to that shownin FIG. 36, FIG. 49, and the like.

FIG. 56 is a sectional view showing the principal parts of still anotherexample of a sectional configuration taken along the line D-D′ in FIG.10. In this case, the sectional configuration taken along the line A-A′in FIG. 10 is as shown in FIG. 53 described in the first embodiment. Thefeature of this configuration lies in that the phase change element PCRis connected between the bit-line contact BC and the bit-line BL and thesource wiring layer SL is disposed above the bit-line BL.

A lower electrode PLUG to the phase change element PCR is disposed onthe bit-line contact BC. It is desirable that the lower electrode PLUGis formed to be smaller in sectional area than the bit-line contact BCbecause of the necessity to reduce a contact area to the phase changeelement PCR. Further, the phase change element PCR and the upperelectrode PL are disposed on the lower electrode PLUG. The bit-line BLand the upper electrode PL are connected by the second bit-line contactBC2. In this configuration, since the phase change element PCR in thememory cell MC is electrically and thermally isolated by the interlayerdielectric, the second source contact SC2, and the like, such anadvantage can be obtained that disturbance to an adjacent memory cell MCcan be reduced.

FIG. 56 shows a system where the source wiring layers SL are mutuallyconnected on the memory cell array MCA, but application to a systemwhere the source wiring layers SL are mutually connected by the memorycells MC arranged in the word line WL direction or a system where theyare mutually connected by the memory cells MC arranged in the bit-lineBL direction is also possible. Especially, when the source wiring layerSL is mutually connected by the memory cells on the same word line WL oron the same bit-line BL, a capacitance of the source wiring layer SL canbe reduced. Therefore, application to an operation system for drivingthe source wiring layer SL is facilitated. The remaining configurationis similar to that in FIG. 36 described above.

Next, examples of circuit diagrams corresponding to the layouts shown inFIG. 9 and FIG. 10 described above will be described with reference toFIG. 11 and FIG. 12. FIG. 11 is a circuit diagram showing one example ofa circuit of a memory cell array in a phase change memory in asemiconductor device according to the second embodiment of the presentinvention. FIG. 12 is a circuit diagram showing one example of a circuitof a memory cell array different from that shown in FIG. 11 in the phasechange memory in the semiconductor device according to the secondembodiment of the present invention.

First, in FIG. 11, a configuration of one memory cell MC is similar tothat shown in FIG. 3 described above. That is, each memory cell MC inthe memory cell array MCA includes: two memory cell transistors Q1 andQ2 in which two adjacent word lines are used as respective gatesthereof, one ends of sources/drains thereof are mutually connected, andother ends of the sources/drains thereof are individually connected tothe same bit-line BL; and a phase change element PCR which is connectedbetween the mutually-connected one ends of the memory cell transistorsand a source electrode SL. Also, the memory cell MC has a configurationwhere the other ends connected to the bit-line BL are shared with theother ends of memory cell transistors in an adjacent memory cell MC onthe same bit-line.

However, when compared with the circuit shown in FIG. 11, arrangement ofa memory cell MC positioned between adjacent bit-lines BL is shifted bya length corresponding to one word line WL in the circuit shown in FIG.11. That is, in the bit-line BL1, word lines WL2 and WL3 are connectedto one memory cell MC, but word lines WL3 and WL4 are connected to thesame memory cell MC in the bit-line BL2.

Note that this configuration is obtained by disposing the phase changeelement PCR on the source contact SC in FIG. 9 and FIG. 10. Also,similar to FIG. 3, a wiring arrangement of the source electrode SL isnot shown, but the source electrode SL may be configured utilizing aplate disposed on the memory cell array MCA or it may be configured as acommon line to which the memory cells MC disposed in the word line WLdirection are connected. An advantage of each configuration is similarto that in the case shown in FIG. 3 described above.

Next, in FIG. 12, a configuration of one memory cell MC is similar tothat shown in FIG. 4 described above. That is, each memory cell MC inthe memory cell array MCA includes: two memory cell transistors Q1 andQ2 in which two adjacent word lines are used as respective gatesthereof, one ends of sources/drains thereof are mutually connected, andother ends of the sources/drains thereof are individually connected tothe source electrode SL; and a phase change element PCR which isconnected between the mutually-connected one ends of the memory celltransistors and a bit-line BL. Also, the memory cell MC has aconfiguration where the other ends connected to the source electrode SLare shared with the other ends of memory cell transistors in an adjacentmemory cell MC on the same bit-line.

Also in this configuration, similar to that in FIG. 11, arrangement ofthe memory cells MC between adjacent bit-lines BL is shifted by a lengthcorresponding to one word line WL. Also, the configuration of the sourceelectrode SL is similar to that shown in FIG. 11 described above.

Note that this configuration is obtained by disposing the phase changeelement PCR on the bit-line contact BC in FIG. 9 and FIG. 10. Further,in FIG. 11 and FIG. 12, the memory cell transistors Q1 and Q2 arecomposed of NMOS transistors, but they may be composed of PMOStransistors.

Next, examples obtained by further modifying the layouts shown in FIG. 9and FIG. 10 will be described. FIG. 13, FIG. 14, and FIG. 15 are layoutdiagrams showing other modified examples of FIG. 9.

In the layout shown in FIG. 13, similar to that in FIG. 10 describedabove, arrangement pitches of the bit-line BL and the active region AAare 3 F, a width of the active region AA is 2 F, and a width of theisolation region STI is F. However, different form that in FIG. 10, thislayout has a feature that a shape of a side of the bit-line BL is formedin a straight line.

This layout can be also applied to both the case where the source wiringlayer SL is disposed above the bit-line and the case where it isdisposed below the bit-line. When the source wiring layer SL is disposedabove the bit-line, it is desirable to form a contact connecting fromthe source contact SC to the source wiring layer SL by using a contactself-aligned to the bit-line BL. This is not always true of the casewhere the source wiring layer SL is disposed below the bit-line BL. Alsoin this configuration, similar to the case shown in FIG. 10 describedabove, a gate width of the memory cell transistors to one phase changeelement PCR is 4 F and a memory cell area is 12 F². The remainingconfiguration is similar to that shown in FIG. 9 and a circuit diagramthereof is shown in FIG. 11 or FIG. 12.

In the layout shown in FIG. 14, arrangement pitches of the bit-line BLand the active region AA are 2.5 F, a width of the active region AA is1.5 F, and a width of the isolation region STI is F. The feature of thislayout lies in that a side on one side of the bit-line BL is formed in arectangular shape so that the bit-line BL bypasses the source contactSC.

This layout can be applied to both the case where the source wiringlayer SL is disposed above the bit-line BL and the case where it isdisposed below the bit-line BL. When the source wiring layer SL isdisposed above the bit-line, it is desirable to form a contactconnecting from the source contact SC to the source wiring layer SL byusing a contact self-aligned to the bit-line BL. This is not true of thecase where the source wiring layer SL is disposed below the bit-line BL.In this configuration, a gate width of the memory cell transistors toone phase change element PCR is 3 F and a memory cell area is 10 F². Theremaining configuration is similar to that shown in FIG. 9 and a circuitdiagram thereof is shown in FIG. 11 or FIG. 12.

In the layout shown in FIG. 15, arrangement pitches of the bit-line BLand the active region AA are 2 F, a width of the active region AA is F,and a width of the isolation region STI is F. In this layout, since boththe active region AA and the bit-line BL are arranged in a straightline, a process such as lithography can be advantageously facilitated.Also, since either of the source contact SC and the bit-line contact BCis disposed in all of the diffusion regions L having an area F²surrounded by the gate G and the isolation region STI, a mask patternused when the contacts are formed and a mask pattern used when thediffusion layers L are formed can be shared in a memory cell MC portion.

This configuration can be applied to the case where the source wiringlayer SL is disposed below the bit-line BL. Further, in thisconfiguration, the gate width of the memory cell transistors to onephase change element PCR is 2 F and a memory cell area is 8 F². Theremaining configuration is similar to that shown in FIG. 9 and a circuitdiagram thereof is shown in FIG. 11 or FIG. 12.

Third Embodiment

In a third embodiment, a whole configuration and an operation of asemiconductor device including the memory cell array described in thefirst and second embodiments will be described. Note that thedescription will be made using the phase change memory as an example.

FIG. 16 is a diagram showing a configuration example of a part of blocksin a whole block configuration of a phase change memory including thememory cell array of the first or second embodiment in a semiconductordevice according to the third embodiment of the present invention. Forexample, the semiconductor device shown in FIG. 16 is composed of amemory unit MA, a main word driver block MWDB, a row decoder X-DEC, acolumn decoder Y-DEC, and others.

The memory unit MA is divided into a plurality of memory cell arrays MCAmainly by sense amplifier blocks SAB and sub-word driver blocks SWDB.The memory cell array MCA includes the configuration as descried in thefirst and second embodiments.

The sense amplifier block SAB is a circuit block including a pluralityof sense amplifier circuits which senses and amplifies data read from amemory cell MC in a memory cell array MCA to a bit-line BL, outputs thesame to the outside, and performs a desired write operation to a memorycell MC according to data inputted from the outside. The sub-word driverblock SWDB is a circuit block which selects and drives word lines WLconnected to respective gates G of the memory cell transistors includedin the memory cell MC. Control circuits for the sub-word driver blockSWDB and the sense amplifier block SAB, a data input/output circuit, andothers are disposed in a crossing region XA between the sub-word driverblock SWDB and the sense amplifier block SAB.

The main word driver block MWDB and the row decoder X-DEC are disposedon a side adjacent to the memory unit MA, and the column decoder Y-DECis disposed on the other side. A main word driver MWD for driving a mainword line in a so-called hierarchical word line configuration accordingto an inputted address is disposed in the main word driver block MWDB.Also, in a non-hierarchical word line configuration, the main worddriver block MWDB can be considered as a word driver and the sub-worddriver block SWDB can be considered as a contact region with a backingwire of the word line WL.

A driver for outputting a select signal YS for performing input/outputto the sense amplifier block SA according to an inputted address andoutputting a write enable signal WR/WS at the time of a write operationand the like are disposed on the column decoder Y-DEC.

In such a configuration, examples of a connecting method of the memorycell array MCA and the sub-word driver block SWDB are shown in FIG. 17Ato FIG. 17A. FIG. 17A to FIG. 17C are schematic diagrams showingexamples of a connecting method of a memory cell array and a sub-worddriver block in the phase change memory of FIG. 16, and FIG. 17A to FIG.17C show different connecting methods, respectively.

FIG. 17A shows a configuration where word lines WL0, WL1, WL2, . . . arealternately connected to upper and lower side sub-word driver blocksSWDB-U and SWDB-D. In this figure, even-numbered word lines WL0, WL2,WL4, . . . are connected to the lower side sub-word driver block SWDB-D,and odd-numbered word lines WL1, WL3, WL5, . . . are connected to theupper side sub-word driver block SWDB-U.

In this case, two word lines WL connected to gates G of two memory celltransistors included in one memory cell MC are driven by the upper andlower sub-word driver blocks SWDB-U and SWDB-D regardless of the memorycell arrays MCA of the first and second embodiments to be used.Therefore, such an advantage can be obtained that a difference between afar end and a near end from the sub-word driver block can be reduced ina read operation.

Though being described later in the description of an operation system,when an operation system where different word lines are separately usedfor a read operation and a write operation is adopted, it is possible toallocate the upper side sub-word driver block SWDB-U to a word driverfor the read/write operation and allocate the lower side sub-word driverblock SWDB-D to a word driver to a write operation. Therefore, such anadvantage can be obtained that wiring of control lines can befacilitated.

FIG. 17B shows a configuration where each two lines of the word linesWL0, WL1, WL2, . . . are alternately connected to the upper and lowersub-word driver blocks SWDB-U and SWDB-D. In this figure, the word linesWL0, WL1, WL4, WL5, . . . are connected to the lower side sub-worddriver block SWDB-D, and the word lines WL2, WL3, WL6, WL7, . . . areconnected to the upper side sub-word diver block SWDB-U.

When each two word lines are drawn from the memory cell array MCA to theword drivers, it becomes easy to use a phase shift lithography whenforming a wiring pattern. In this case, since an optical phase on a maskfor patterning the word lines WL to be drawn becomes an opposite phase,such an advantage can be obtained that the breakage and short-circuit atdrawn portions can be prevented even in a fine wiring pitch.

When a memory cell array MCA as shown in the first embodiment is used,the gates G of two memory cell transistors in one memory cell MC can bedriven by the sub-word driver block SWDB on the same side. Though beingdescribed later in the description of an operation system, when anoperation system where two transistors are always used in the read/writeoperation is adopted, since a circuit configuration of the sub-worddriver blocks SWDB-U and SWDB-D is simplified as compared with thatshown in FIG. 17A described above, such an advantage can be obtainedthat an area of the sub-word driver block can be reduced.

Further, in FIG. 17B, when a connecting method of word lines is shiftedby one to obtain a configuration where, for example, the word lines WL1,WL2, WL5, WL6, . . . are connected to the sub-word driver block SWDB-Uand the word lines WL0, WL3, WL4, WL7, WL8, . . . are connected to thesub-word driver block SWDB-D, the gates G of two memory cell transistorsin one memory cell MC can be driven by the upper and lower sub-worddrivers SWDB-U and SWDB-D, respectively, like the case shown in FIG.17A. The advantage in this case is similar to that shown in FIG. 17Adescribed above.

Furthermore, when the memory cell array MCA as shown in the secondembodiment is used in the configuration shown in FIG. 17B, combinationsof word lines WL connected to a memory cell MC are different betweenadjacent bit-lines BL, and the combination of the word lines WL becomesequal in a bit-line BL and a bit-line BL next to an adjacent bit-lineBL. Therefore, the number of bit-lines operated in the memory cell arrayMCA becomes half in a read operation using two bit-lines simultaneously,and the number of operating cells is reduced and such an advantage canbe obtained that concentration of heat causing disturbance issuppressed.

FIG. 17C shows a configuration where all word lines WL are driven by thesub-word driver block SWDB disposed at one end of the memory cell arrayMCA. In this configuration, a layout pitch of respective word drivers inthe sub-word driver block SWD becomes small, but since operation timingis the same even if any word line WL is selected, a timing margin can bereduced, and therefore, this configuration is suitable for high-speedoperation.

Next, examples of a connecting method of the memory cell array MCA andthe sense amplifier block SAB are shown in FIG. 18A to FIG. 18C. FIG.18A to FIG. 18C are schematic diagrams showing examples of a connectingmethod of a memory cell array and a sense amplifier block in a phasechange memory, and FIG. 18A to FIG. 18C show different connectingmethods, respectively.

FIG. 18A shows a configuration where bit-lines BL0, BL1, BL2, . . . ofthe memory cell array MCA are alternately drawn to left and right senseamplifier blocks SAB. In this configuration, since the least significantaddress of the bit-line BL coincides with the sense amplifier block SAB,such an advantage can be obtained that correlation between logicaladdress and physical address is simplified.

Also, when the memory cell array MCA as shown in the first embodiment isused, data is read to the sense amplifier blocks SAB on both sides,which is suitable for outputting many bits. On the other hand, when thememory cell array MCA as shown in the second embodiment is used, sincedata is read by only a sense amplifier block SAB on one side, only asmall amount of data can be outputted but the number of circuits to beoperated can be reduced and reduction in power consumption can berealized.

FIG. 18B shows a configuration where each two lines of bit-lines BL0,BL1, BL2, . . . of the memory cell array MCA are alternately drawn toleft and right sense amplifier blocks SAB. In this configuration, any ofthe memory cell arrays MCA shown in the first and second embodiments canbe used. Further, by drawing each two lines of the bit-lines from thememory cell array MCA to the sense amplifier blocks SAB, it becomes easyto use a phase shift lithography when forming a wiring pattern. In thiscase, since an optical phase on a mask for patterning the bit lines BLto be drawn becomes an opposite phase, such an advantage can be obtainedthat the breakage and short-circuit at drawn portions can be preventedeven in a fine wiring pitch.

FIG. 18C shows a configuration where all bit-lines BL0, BL1, BL2, . . .are connected to a sense amplifier block disposed on one end of thememory cell array MCA. In this configuration, since a layout pitch ofthe sense amplifier SA becomes equal to a pitch of the bit-line when asense amplifier AS is disposed for each bit-line, it is desirable toapply this configuration to a layout of a memory cell array MCA where awiring pitch of the bit-line is relatively wide. Also, it is desirableto apply this configuration to a system where a plurality of bit-linesBL are allocated to one sense amplifier SA via selecting means in asense amplifier block SAB to reduce the number of sense amplifiers SA,thereby reducing a layout pitch of the sense amplifier SA.

Next, a configuration example of the sense amplifier block SAB will bedescribed. FIG. 19 is a circuit block diagram showing one example of aconfiguration of a sense amplifier block in the phase change memoryshown in FIG. 16. Similar to the sense amplifier block SAB in theconfiguration in FIG. 16, the sense amplifier block SAB shown in FIG. 19is sandwiched between the memory cell arrays MCA and is shared by thememory cell arrays on both sides. With such a configuration, the numberof sense amplifier blocks SAB can be reduced to about half and thereduction of a chip area can be realized.

Also, in this configuration, the sense amplifiers SA are disposed toeach two bit-lines BL drawn from the memory cell array MCA disposed onone side of the sense amplifier block SAB. In this case, it is possibleto simultaneously read half of the bit-lines drawn from the memory callarray MCA to the sense amplifier block SAB on one side.

Such a sense amplifier block SAB is composed of a plurality of senseamplifiers SA. Each sense amplifier SA has bit-line selector circuitsBLSEL, a precharge circuit PC, a write driver WD, a cross-couplingamplifier CC, an input/output circuit IOG, and others. The bit-lineselector circuits BLSEL are respectively disposed on left and rightsides in one sense amplifier SA so that the sense amplifier SA is sharedby left and right memory cell arrays MCA. The write driver WD, thecross-coupling amplifier CC, the input/output circuit IOC, the prechargecircuit PC, and others are disposed between the two bit-line selectorcircuits BLSEL. Respective circuit blocks have the configurations asshown in FIG. 20 and FIG. 21.

FIG. 20A to FIG. 20D are circuit diagrams showing examples of specificconfiguration of the respective circuit blocks in the sense amplifiershown in FIG. 19. More specifically, FIG. 20A shows a configurationexample of the bit-line selector circuit, FIG. 20B shows a configurationexample of the precharge circuit, FIG. 20C shows a configuration exampleof the input/output circuit, and FIG. 20D shows a configuration exampleof the cross-coupling amplifier. FIG. 21A to FIG. 21D are circuitdiagrams showing examples of specific configurations of a write driverin the sense amplifier block shown in FIG. 19, and FIG. 21A to FIG. 21Dshow different configuration examples, respectively.

The bit-line selector circuit BLSEL shown in FIG. 20A is a circuit blockwhich selects one bit-line from two bit-lines BL to connect the same tothe write driver WD, the cross-coupling amplifier CC and theinput/output circuit IOG.

In FIG. 20A, a precharge signal PCN is a control signal for setting thebit-lines BL0 and BL1 of the memory cell array MCA to a predeterminedvoltage at the time of standby. In this configuration, the bit-lines areset to a ground potential VSS which is a potential equal to that of thesource electrode SL of the memory cell MC. By this means, since novoltage is applied to the memory cell transistors and the phase changeelement PCR at the standby time, such an advantage can be obtained thatthe flow of the disturbance current can be prevented.

Bit-line select signals BLSe and BLSo (BLSe/o) are control signals forselecting a bit-line to be connected to a read bit-line BLSA in thesense amplifier SA form the bit-lines BL0 and BL1 drawn from the memorycell array MCA. In this configuration, the bit-line select signal BLSe/ois shared by respective sense amplifiers SA in the sense amplifier blockSAB. That is, in this configuration, even-numbered or odd-numberedbit-lines BL can be selected from the bit-lines BL drawn from the memorycell array MCA to the sense amplifier block SAB.

Also, this configuration can be applied to a system where a prechargelevel at the time of read operation is outputted by charge share betweena read bit-line BLSA in the sense amplifier SA and the bit-line BL orBL1 (a first bit-line) of the memory cell array MCA (a first memory cellarray) on a read side (a select side). By this means, a switch forsetting to a read level is not required and such an advantage can beobtained that a chip area can be reduced. The details will be describedlater with reference to FIG. 22.

A reference select signal REFS is a select signal for inputting andsetting a desired reference level to a reference bit-line BLREF servingas a reference potential signal of the sense amplifier SA when access tothe memory cell array MCA sharing the sense amplifier block SAB isperformed. In this configuration, a bit-line BL of the memory cell arrayMCA (a second memory cell array) on a non-select side is utilized forsetting to the reference level. More specifically, the reference levelis set by performing charge share between the reference bit-line BLREFin the sense amplifier SA and two bit-lines BL (a second bit-line and athird bit-line) in the memory cell array MCA on the non-select side. Bythis means, an intermediate level power source for reference is notrequired, and such an advantage can be obtained that the reference levelcan be set to about ½ of the bit-line precharge level at the time ofread operation. The details thereof will be described later withreference to FIG. 22.

Transfer gate control signals TGe and TGo (TGe/o) are control signalsfor connecting a write bit-line WBL in the sense amplifier SA and abit-line BL0 or BL1 on the memory cell MC side to each other. Thetransfer gate signals TGe and TGo operate in response to the bit-lineselect signals BLSe and BLSo, respectively. More specifically, thetransfer gate control signals operate so that a write bit-line WBL (afourth bit-line) is connected to the bit-line BL0 or BL1 (the firstbit-line) utilized for the reading.

In this configuration, a transistor (a first switch) to which thetransfer gate control signal TGe/o is connected is composed of only anNMOS transistor. Accordingly, in order to secure a sufficient current inthe write operation, it is desirable to use voltage swing sufficientlylarger than the write bit-line WBL swing voltage to the transfer gatecontrol signal TGe/o. By this means, such an advantage can be obtainedthat, when the write bit-line WBL and the bit-line BL in the memory cellarray MCA are connected to each other, influence of a threshold voltageof the transistor of the transfer gate can be eliminated. Also, when thecontrol signal is composed of complementary signals and the transfergate is composed of a CMOS transistor switch, such an advantage can beobtained that the same voltage as voltage swing of the write bit-lineWBL can be utilized as the voltage swing of the control signal. Further,the configuration where the transfer gate is composed of a PMOStransistor is suitable for the high-potential transmission from thewrite bit-line WBL to the bit-lines BL0 and BL1 in the memory cell arrayMCA, and it becomes possible to acquire a large current at the time ofwrite operation.

The precharge circuit PC shown in FIG. 20B is a circuit for prechargingthe read bit-line BLSA and the reference bit-line BLREF in the senseamplifier SA to a predetermined voltage at a standby time. In thisconfiguration, the read bit-line BLSA and the reference bit-line BLREFare precharged to a bit-line swing voltage VBL at the standby time bytwo PMOS transistors controlled by bit-line precharge signals PCP. Also,a MOS transistor for short-circuiting the read bit-line BLSA and thereference bit-line BLREF to each other may be added. When such aconfiguration is adopted, such an advantage can be obtained that an areacorresponding to the size of the short-circuiting MOS transistor can bereduced.

The input/output circuit IOG shown in FIG. 20C is a circuit foroutputting data retained in respective bit-lines BLSA and BLREF in thesense amplifier SA to an input/output line IOt/b at the time of readoperation and writing write data transmitted via the input/output lineIOt/b to respective bit-lines BLSA and BLREF in the sense amplifier SAat the time of write operation. This configuration has two NMOStransistors which are disposed between the bit-line BL and theinput/output line IOt/b and whose gates are controlled by column selectsignals YS. The column select signal YS is activated in both read andwrite operations to connect the read bit-line BLSA and the referencebit-line BLREF to the input/output line IOt/b, thereby controlling theinput/output of data.

The cross-coupling amplifier CC shown in FIG. 20D is a sense amplifierof a conventional cross-coupling type and is a circuit for amplifying afine signal between the read bit-line BLSA and the reference bit-lineBLREF up to a bit-line swing voltage VBL through the positive feedback.The cross-coupling amplifier is activated by sense amplifier activationsignals SAN and SAP.

The write driver WD shown in FIG. 21A is a circuit for driving the writebit-line WBL at a timing determined by a write enable signal WR or WSaccording to data retained by the read bit-line BLSA and the referencebit-line BLREF to supply a current to the phase change element PCR viathe bit-line BL in the memory cell array MCA.

The configuration thereof includes a drive circuit for reset (a secondwrite driver) provided between a power source terminal VWR generating awrite voltage for reset and a write bit-line WBL (a fourth bit-line), adrive circuit for set (a first write driver) provided between a powersource terminal VWS generating a write voltage for set and the writebit-line WBL, a switch circuit provided between the write bit-line WBLand the reference potential terminal (a ground potential) VSS, andothers.

The drive circuit for reset includes two PMOS transistors connected inseries by the power source terminal VWR, and the reference bit-lineBLREF in the sense amplifier SA is connected to the gate of the PMOStransistor of the two transistors on the power source terminal VWR sideand a write enable signal for reset WR is connected to the gate of theother PMOS transistor. Similarly, the drive circuit for set alsoincludes, for example, two PMOS transistors connected in series, and theread bit-line BLSA in the sense amplifier SA is connected to the gate ofthe PMOS transistor on the power source terminal VWS side and a writeenable signal for set WS is connected to the gate of the other PMOStransistor. The switch circuit is composed of, for example, an NMOStransistor, and a write enable signal for set WS is connected to thegate thereof.

The write enable signal WR determines a write time in a reset operationof the phase change element PCR. Similarly, the write enable signal WRdetermines a write time in a set operation of the phase change elementPCR. Further, after the write operation, the write enable signal WSdrives the switch circuit to set the write bit-line WBL to a voltagestate (a ground potential VSS in FIG. 21) at a standby time.

In the set operation, a write voltage VWS is applied to the memory cellMC via the write bit-line WBL and the bit-line BL in the memory cellarray MCA to supply a desired current. A phase state of the phase changeelement PCR can be changed by controlling a write current. Accordingly,since the write current into the memory cell MC can be controlled bycontrolling a drivability of the transistor in the drive circuit for setto which the write enable signal SW is inputted, the same power sourcecan be used for the voltages VWS and VWR in the write driver WD.

The write driver WD shown in FIG. 21B is a write driver using a currentmirror system. In this configuration, the power source terminal forreset VWR and the power source terminal for set VWS in the configurationshown in FIG. 21A are configured as a common power source terminal VBL,and PMOS transistors for current limitation MPR and MPS are respectivelyadded to the drive circuit for reset and the drive circuit for set inthe configuration shown in FIG. 21A. The PMOS transistor for currentlimitation MPR is connected in series to two PMOS transistors in thedrive circuit for reset described above. Similarly, the PMOS transistorfor current limitation MPS is connected in series to two PMOStransistors in the drive circuit for set described above.

The PMOS transistors for current limitation MPR and MPS form currentmirror circuits between them and the PMOS transistor MP in a writecurrent generating circuit WCG. A reference current Iwref of a writesignal is supplied to the PMOS transistor MP in the write currentgenerating circuit WCG. Since the PMOS transistor MP has theconfiguration in which through current flows as described above, it isdesirable that the PMOS transistor is formed to have a small gate size.Note that one write current generating circuits WCG is disposed for eachwrite driver WD or for each sense amplifier block SAB.

In order to supply a current required for reset, the PMOS transistor MPRhas a gate size fixed times the PMOS transistor MP in the write currentgenerating circuit WCG, for example, about 5 to 40 times. Similarly, inorder to supply a current required for set, the PMOS transistor MPS hasa gate size fixed times the PMOS transistor MP in the write currentgenerating circuit WCG, for example, about 2 to 20 times which issmaller than the above-described PMOS transistor MPR. A relationshipamong the write enable signals WS and WR, the bit-lines BLSA, BLREF, andthe write bit-line WBL is similar to that shown in FIG. 21B describedabove.

The write driver WD shown in FIG. 21C is a modified configurationexample of FIG. 21A, in which the write enable signal WE is addedbesides the write enable signals WR and WS corresponding to reset andset. The write enable signal WE is connected to the gate of the NMOStransistor in the above-described switch circuit instead of the writeenable signal for set WS in FIG. 21A.

The write enable signal WE can be wired in parallel to the column selectsignal YS or it can be wired in parallel to the word line WL.Especially, when the write enable signal WE is wired in parallel to theword line WL, simultaneous writing to many cells can be performed, whichis suitable for a multi-bit write operation. On the other hand, when thewrite enable signal is wired in parallel to the column select signal YS,the wiring is suitable for a specific bit rewrite operation. Therefore,it is desirable that the wiring is applied to a random access memory.The remaining configuration is similar to that shown in FIG. 21Adescribed above.

The write driver WD shown in FIG. 21D is a modified configurationexample of FIG. 21B, and it has a feature that the write enable signalWE is used besides the write enable signals WR and WS corresponding toreset and set for performing a write operation like the case shown inFIG. 21C described above. The write enable signal WE is similar to thatshown in FIG. 21C described above. The remaining configuration issimilar to that shown in FIG. 21B.

In the foregoing, the respective circuit blocks in FIG. 19 have beendescribed. However, these circuit systems are not limited to those shownin FIG. 20 and FIG. 21, of course, and any configurations havingfunctions similar to those of the circuit systems can be adopted.

Next, a read operation when the sense amplifier block SAB shown in FIG.19 to FIG. 21 is used will be described. FIG. 22 is a waveform diagramshowing one example of an operation when reading is performed from astandby state by using the sense amplifier block shown in FIG. 19 toFIG. 21.

In FIG. 22, first, a precharge signal PCN which is performing aprecharge operation transits from a high potential VDD state to a groundpotential VSS, and a precharge signal PCP transits from the groundpotential VSS to the high potential VDD so that they are put innon-active states. By this means, read bit-lines BLSA01, BLSA23, . . .and reference bit-lines BLREF01, BLREF23, . . . in the sense amplifierSA, and bit-lines BL0(L), BL0/1(R), BL2(L), BL2/3(R), . . . are put infloating states.

Here, as shown in FIG. 19, the bit-lines BL0(L) and BL2(L) representbit-lines drawn from the memory cell array MCA disposed on the left sideof the sense amplifier block SAB, and bit-lines BL0/1(R) and BL2/3(R)represent bit-lines drawn from the memory cell array MCA disposed on theright side of the sense amplifier block SAB.

The read bit-lines BLS01, BLSA23, . . . and the reference bit-linesBLREF01, BLREF23, . . . in the sense amplifier SA are precharged to ahigh potential such as the bit-line swing voltage VBL. On the contrary,the bit-lines BL0(L), BL2(L), BL0/1(R), and BL2/3(R) in the memory arrayare set to the ground potential VSS equal to that of the sourceelectrode SL.

Thereafter, a bit-line select signal BLS(L)e transits from the groundpotential VSS to the high potential VDD or a potential VTG for atransfer gate in the bit-line selector circuit BLSEL on the selectmemory cell array (a memory array performing read operation) MCA side inthe sense amplifier block SAB, and it is put in an active state. By thismeans, an even-numbered bit-line BL, for example, the bit-line BL0(L) ofthe bit-lines BL drawn from the select memory cell array MCA to thesense amplifier block SAB is connected to the read bit-line BLSA01 inthe sense amplifier SA. Thus, the bit-line BL0(1) and the read bit-lineBLSA01 are set to a voltage VPR by charge share.

Simultaneously, both two bit-lines in the non-select memory cell arrayMCA, for example, BL0(R) and BL1(R) are connected to the referencebit-line, for example, BLREF01 according to activation of a REFS(R)signal in the bit-line selector circuit BLSEL on the non-select memorycell array side in the sense amplifier block SAB. Since a bit-linecapacitance in the memory cell array MCA is larger than a bit-linecapacitance in the sense amplifier SA, voltages of the referencebit-lines BLREF01, BLREF23, . . . can be set to about half of thevoltage VPR of the bit-lines BLSA01, BLSA23, . . . in the senseamplifier SA through the operation described above.

After the bit-line BL in the select memory cell array MCA reaches abit-line level VPR at the time of read operation, the word line WLtransits from a standby time voltage VWL to an activation time voltageVWH to be activated according to an input address. In FIG. 22, two wordlines WL3/4 are simultaneously driven. However, when a current requiredfor read operation can be supplied by one memory cell transistor, onlyone word line can be activated.

Then, the bit-line BL and the phase change element PCR are connected toeach other by the activation of the word line WL. In FIG. 22, operationwaveforms when the phase change element PCR in the memory cell MC are inan amorphous state, namely, a high resistance state are shown in thebit-lines BL0(L) and BLSA01, and operation waveforms in apolycrystalline state, namely, a low resistance state are shown in thebit-lines BL2(L) and BLSA23. As shown in FIG. 22, the bit-line which hasread the memory cell MC in the high resistance state hardly changes fromthe precharge voltage VPR. On the other hand, in the bit-line which hasread the memory cell MC in the low resistance state, charges in thebit-line are discharged to the source electrode SL via the memory celltransistor, and the potential of the bit-line changes to the groundpotential VSS which is a level of the source electrode SL.

After a predetermined time has elapsed from the activation of the wordline WL, a signal is transmitted to the read bit-lines BLSA01 and BLSA23in the sense amplifier SA, and the bit-line select signal BLSe thentransits to the ground potential VSS to be put in a non-select state.Thereafter, the sense amplifier activation signals SAN and SAPrespectively transit from the ground potential VSS and the highpotential VDD to the high potential VDD and the ground potential VSS tobe activated, and the sense amplifier SA operates so as to amplify afine signal between the read bit-line BLSA and the reference bit-lineBLREF in the sense amplifier SA up to the bit-line swing voltage VBL.

Simultaneously with the operation of the sense amplifier SA or after theoperation thereof, the transfer gate signal TG(L)e transits from theground potential VSS to the voltage for transfer gate VTG to beactivated, and the write bit-line WBL in the sense amplifier SA and thebit-lines BL0(L), BL1(L), . . . in the select memory cell array MCA areconnected. By this means, the bit-line which is reading a highresistance is also set to the potential VSS equal to that of the sourceelectrode SL and application of a voltage to the phase change elementPCR in the memory cell MC can be prevented. Accordingly, the disturbanceis suppressed.

Preparation of the column access is completed according to theabove-described operation. Thereafter, data retained in the senseamplifier SA is outputted to the outside via the input/output IOt/baccording to the column select signal YS.

Next, a driving method of the memory array MA including such a readoperation will be described. FIG. 23 is a waveform diagram showing oneexample of read and write operations of a memory array in the phasechange memory shown in FIG. 16.

The feature of the operation shown in FIG. 23 lies in that two wordlines WL are activated so as to utilize two memory cell transistors inthe memory cell MC in both cases of the read operation and the writeoperation (set and reset operations). Also, a page mode operation and awrite operation to a memory cell MC like a general-purpose DRAM (dynamicrandom access memory) are realized. Further, set and reset are performedsimultaneously in order to speed up a column cycle.

When this operation system is applied, circuit configurations shown inFIG. 21A and FIG. 21B are suitable for the write driver WD in the senseamplifier block SAB. However, a circuit configuration such as shown inFIG. 21C or 21D can be also applied. In this case, it is necessary toadd a write enable signal for column write WE. The write enable signalfor column write WE is a signal which maintains an “L” state during theset/reset operation in FIG. 21C or 21D.

In FIG. 23, an operation from the step of reading data in the memorycell MC to the step of retaining the same in the sense amplifier SA issimilar to that shown in FIG. 22 described above, and two word lines WLare put in an activated state so as to utilize two memory celltransistors in the memory cell MC in this read operation. In FIG. 23,for the bit line BL0(L), an operation is assumed where, after a highresistance state (‘1’) is read to output the data thereof to theoutside, a column access operation on the same word line WL is performedaccording to a page access, and then rewriting to a low resistance state(‘0’) is performed according to write data from the outside. On thecontrary, for the bit-line BL2(L), an operation is assumed where readdata is ‘0’ and rewriting to ‘1’ is performed thereafter through thereverse writing.

First, after data is read to the sense amplifier SA, the transfer gatesignal TG is activated. Thereafter, for example, when read operation isto be performed, the column select signal YS is activated in order tooutput data to the outside, and then, the data is outputted.

Next, the case where write operation is performed in a column accessoperation will be described.

In the write operation, simultaneously with the activation of the columnselect signal YS, write data is written in a sense amplifier SA selectedaccording to a column select signal YS via the input/output lines IO0t/b and IO1 t/b and is retained in the cross-coupling amplifier CC. Whenthe column select signal is brought in a non-select state, a writeenable signal for set write WS wired in parallel to the column selectsignal YS transits from the high potential state VDD to the groundpotential VSS to be activated. In this manner, the set operation isstarted.

In this figure, a memory cell MC on the bit-line BL0(L) performs a setoperation. In the write driver WD in the sense amplifier SA, as shown inFIG. 21A and the like, the write enable signal for set WS is put in anactivated state (‘L’) when the bit-line BLSA01 in the sense amplifier isin the ‘L’ state. By this means, a desired voltage VWS is applied to thebit-line BL0(L) via the write bit-line WBL01 and a current required forset operation is supplied to the phase change element PCR in the memorycell MC. A write current is supplied for a period required for the set,for example, about 15 ns when a high-speed operation is performed orabout 1 μs when a reliable write operation is performed.

Subsequent to the set operation, the write enable signal for reset writeWR wired in parallel to the column select signal YS transits from thehigh potential state VDD to the ground potential VSS to be activated. Inthis manner, the reset operation is started.

In FIG. 23, a reset operation is performed to the memory cell MC on thebit-line BL2. In the write driver WD in the sense amplifier SA, when thereference bit-line BLREF23 in the sense amplifier SA is in an ‘L’ stateand the write enable signal for reset WR becomes a selected state ('L′),a desired voltage VWR is applied to the bit-line BL2(L) via the writebit-line WBL23 and a current required for reset operation is supplied tothe phase change element PCR of the memory cell MC. The write current issupplied for a period required for the reset, for example, for about 5ns to 50 μs.

As a result, the phase change element PCR generates heat and is thenmelted. Thereafter, the respective write enable signals transit to highpotential states VDD and are put into a non-selected state, therebyterminating the write operation. Then, the write current is stopped andthe phase change element PCR is cooled and its phase state is changed.

Next, a precharge operation will be described.

After a fixed time has elapsed from the input of a precharge command orthe input of a read/write command, the word line WL first transits froma voltage VWH of the select state to a voltage VWL of the non-selectstate to be put into a non-select state. Thereafter, the transfer gatesignal TG transits from the activation voltage VTG to the groundpotential VSS to be put into a non-select state, and the bit-line BL inthe memory cell array MCA and the write bit-line WBL in the senseamplifier SA are separated from each other.

Thereafter, the sense amplifier SA becomes a non-select state by senseamplifier activation signals SAN and SAP. Subsequently, the bit-linesBL0(L/R), BL1(L/R), . . . in the memory cell array MCA and the readbit-lines BLSA01, BLSA23, . . . and the reference bit-lines BLREF01,BLREF23, . . . in the sense amplifier are respectively precharged byprecharge signals PCN/PCP to the ground potential VSS and the bit-lineswing voltage VBL which are the desired precharge levels.

As described above, the operation shown in FIG. 23 has an advantagethat, since two word lines are used in both the read operation and thewrite operation, large read/write current drivability can be realized.Since the system of utilizing two word lines in the write operation canrealize a continuous write operation in a continuous column operation,it is suitable for page mode, but it may also be applied to a non-pagemode operation.

Note that the respective operation voltages shown in the above-describedoperation desirably have the following values. That is, it is desirablethat the word line select voltage VWH is 1.8V, the bit-line swingvoltage is 1.2V, the word line non-select voltage VWL is 0V, the groundpotential VSS is 0V, the transfer gate voltage VTG is 1.5 to 1.8V, theset write voltage VWS is 1.0V, and the reset write voltage is about1.2V.

FIG. 24 is a waveform diagram showing another example of read and writeoperations of a memory array in the phase change memory shown in FIG.16. The feature of the operation shown in FIG. 24 lies in that twomemory cell transistors in the memory cell MC are used in a read andreset (first data) write operation, but only one memory cell transistorin the memory cell is utilized in a set (second data) operation. Whenthis operation system is applied, different from the case shown in FIG.23, set and reset are individually performed. Therefore, the circuitconfigurations shown in FIG. 21C and FIG. 21D are desirable as a circuitconfiguration of the write driver WD in the sense amplifier block SAB.

In FIG. 24, an operation from the step of a command input and performinga read operation using two word lines WL3 and WL4 to the step ofamplifying the read data in the sense amplifier SA is similar to thatdescribed above. Though not shown in FIG. 24, when data is outputtedthereafter to the outside according to a column select signal YS, theoutput is performed as shown in FIG. 23 described above. A writeoperation will be described below.

When the column select signal YS is activated, data transmitted from theoutside via the input/output lines IO0 t/b and IO1 t/B is written to thecross-coupling amplifier CC in the write-selected sense amplifier SA.When the column select signal YS is brought into a non-select state, thewrite enable signal for reset write WR and the write enable signal WEare activated (‘L’ state). By this means, a current required for resetis supplied to the memory cell MC via the write bit-line WBL23 and thebit-line BL2(L). After the activation for a predetermined period, thewrite enable signals WR and WE are brought into a non-select state.

Thereafter, one (here, word line WL3) of two word lines WL3 and WL4 isbrought into a non-select state. Then, the write enable signal for setwrite WS and the write enable signal WE are brought into an activatedstate, and a current required for set is supplied to the write selectmemory cell MC via the write bit-line WBL01 and the bit-line BL0(L).After the activation for a predetermined period, the write enablesignals WS and WE are brought into a non-select state. When the writeoperation is completed, the precharge operation is performed as shown inFIG. 23 described above.

In this system, since the two memory cell transistors are used inread/reset write operation, a current drivability can be secured. Also,since the number of memory cell transistors to be used is limited to onein a set write operation, a write current is restricted and theoccurrence of re-resetting due to abnormal overheating after the set canbe suppressed, and therefore, a stable set operation can be realized.

FIG. 25 is a waveform diagram showing still another example of read andwrite operations of a memory array in the phase change memory shown inFIG. 16. The feature of the operation shown in FIG. 25 lies in that onlyone memory cell transistor in a memory cell MC is used in a readoperation but two memory cell transistors in the memory cell MC are usedin a write operation (set/reset operation). That is, this operationsystem has a feature that the number of word lines activated in the readoperation is limited to one in comparison to the case shown in FIG. 23described above.

Since the set and the reset are simultaneously performed, theconfigurations shown in FIG. 21A and FIG. 21B are desirable as a circuitconfiguration for the write driver WD in the sense amplifier block SAB.However, the circuit configurations of FIG. 21 C and D can also beapplied. In this case, it is necessary to add a write enable signal WE.Also, the write enable signal WE is a signal for maintaining an ‘L’state during the set/reset operation.

In FIG. 25, operation system from the step of a command input to thestep of activation of the word line is similar to the respective systemsdescribed above. Subsequently, different from the above-describedsystem, only one of two word lines (here, the word lines WL3 and WL4) towhich the memory cell MC is connected is activated when a word linecorresponding to an address is activated. In the figure, only the wordline WL3 is activated. Thereafter, when the sense amplifier SA amplifiesdata, the word line WL4 paired with the word line WL3 is activated toperform a column operation. The remaining operation is similar to thatshown in FIG. 23.

This system has an advantage that, since the number of word lines in theread operation is limited to one, a current drivability in the readoperation is restricted and the breakage of memory cell data due to readoperation can be suppressed. Since two word lines are utilized in thewrite operation in this system like the system shown in FIG. 23, acontinuous write operation in a continuous column operation can berealized and the system is suitable for a page mode, but the system canalso be applied to a non-page mode operation.

FIG. 26 is a waveform diagram showing still another example of read andwrite operations of a memory array in the phase change memory shown inFIG. 16. The feature of the operation shown in FIG. 26 lies in that onlyone memory cell transistor in the memory cell MC is used in the read andset operation and two memory cell transistors in the memory cell areused to perform writing in the reset operation.

Since the number of word lines to be activated differs in the set andreset operations like the system shown in FIG. 24 described above, it isdesirable to apply this operation system to a non-page mode. The circuitconfigurations shown in FIG. 21C and FIG. 21D are desirable as thecircuit configuration for the write driver WD in the sense amplifierblock SAB.

In FIG. 26, an operation from the step of a command input and anactivation of the word line WL3 to the step of amplifying the read datain the sense amplifier SA is similar to the operation shown in FIG. 25described above. Thereafter, though not shown in FIG. 26, it is alsopossible to output the data to the outside according to the columnselect signal YS. The write operation will be described below.

When the column select signal YS is activated, data transmitted from theoutside via the input/output lines IO0 t/b and IO1 t/B is written to thecross-coupling amplifier CC in the write-selected sense amplifier SA.When the column select signal YS is brought into a non-select state, thewrite enable signal for set write WS and the write enable signal WE areactivated (‘L’ state). By this means, a current required for the set issupplied to the memory cell MS via the write bit-line WBL01 and thebit-line BL0(L). After the activation for a predetermined period, thewrite enable signals WS and WE are brought into a non-select state.

Subsequently, the word line WL4 paired with the word line WL3 is broughtinto a select state. Thereafter, the write enable signal for reset writeWR and the write enable signal WE are brought into an activated state,and a current required for the reset is supplied to the write selectmemory cell MC via the write bit-line WBL23 and the bit-line BL2(L).After the activation for a predetermined period, the write enablesignals WR and WE are brought into a non-select state.

When the write operation is completed, a precharge operation isperformed like the case shown in FIG. 23 described above. In thissystem, since only one memory cell transistor is used in the read andset write operations, a current drivability is restricted and thebreakage in the read operation and re-resetting due to abnormaloverheating in the set operation can be prevented. Also, since twomemory cell transistors are used in the reset write operation, a currentdrivability is secured and stable reset operation can be realized.

FIG. 27 is a waveform diagram showing still another example of read andwrite operations of a memory array in the phase change memory shown inFIG. 16. Similar to the operation in FIG. 26, in the operation shown inFIG. 27, only one memory cell transistor in the memory cell MC is usedin the read and set operations, and two memory cell transistors in thememory cell are used to perform writing in the reset operation.

However, the same word line is activated and the same memory celltransistor is used in the read and set operations in FIG. 26, but thisoperation has a feature that a memory cell transistor for read operationand a memory cell transistor for set operation are separately provided.Note that, similar to the case shown in FIG. 26, the circuitconfigurations shown in FIG. 21C and FIG. 21D are desirable as thecircuit configuration for the write driver WD in the sense amplifierblock SAB.

In FIG. 27, an operation from the step of a command input and activationof one word line to the step of retaining the data in the senseamplifier SA is similar to that shown in FIG. 26 described above. Here,data can be outputted to the outside using the column select signal YSas read operation, as shown in FIG. 23 and the like. The write operationwill be described below.

In the write operation, when the column select signal YS is activated,data transmitted from the outside via the input/output lines IO0 t/b andIO1 t/B is written to the cross-coupling amplifier CC in thewrite-selected sense amplifier SA. Almost simultaneously with this, theword line WL4 paired with the word line WL3 that is put in an activatedstate is activated. An operation subsequent thereto is similar to thewrite operation shown in FIG. 24.

In this system, by performing switching of transistors to be usedbetween the read operation and the set operation, such an advantage canbe obtained that it is possible to use memory cell transistors optimalfor respective operations, and stable read operation and write operationcan be realized in addition to the advantage shown in FIG. 26 describedabove.

In the foregoing, the invention made by the inventors of the presentinvention has been concretely described based on the embodiments.However, it is needless to say that the present invention is not limitedto the foregoing embodiments and various modifications and alterationscan be made within the scope of the present invention.

For example, it is desirable to apply the present invention to asemiconductor device fabricated through the processing technology of 130nm or less where rewrite current of a phase change element can bereduced. Also, even in a larger process generation, similar effect canbe obtained by reducing a contact area to a phase change element.Further, it is needless to say that the present invention can be appliedto a generation where miniaturization has been further progressed.Furthermore, the present invention can be applied to a signal memorychip or a logic embedded memory.

Also, the low resistance state of the polycrystalline state is definedas ‘0’ state and the high resistance state of the amorphous state isdefined as ‘1’ in the present invention, but the high resistance stateof the amorphous state can be defined as ‘0’ and the low resistancestate of the polycrystalline state can be defined as ‘1’.

As described above, effects obtained by representative ones of theinventions disclosed in this application will be described as follows:

By using a memory cell where respective one ends of two memory celltransistors are mutually connected to one end of a memory element, itbecomes possible to increase the drivability of the memory celltransistors to one memory element.

Also, by sharing the other ends of two memory cell transistors byadjacent memory cells, it becomes possible to realize an area reductionin addition to improvement of the drivability of the memory celltransistors.

Also, when read operation and write operation to a memory element areperformed, both two memory cell transistors or either one memory celltransistor can be driven according to the contents of the operations.Therefore, stable read operation and write operation can be realized.

INDUSTRIAL APPLICABILITY

The present invention provides a technology effectively applied to asemiconductor device having a high density integrated memory circuit, alogic embedded memory including a memory circuit and a logic circuitformed on the same semiconductor substrate, and an analog circuit whichare formed of a phase change material.

1. A semiconductor device comprising: a first transistor including afirst impurity region formed in the semiconductor substrate and a secondimpurity region formed in the semiconductor substrate; a secondtransistor including the first impurity region and a third impurityregion formed in the semiconductor substrate; a first chalcogenide filmformed over the first transistor and second transistor, the firstchalcogenide film retaining data based on electric resistance; a firstwiring formed over the first transistor and second transistor; and asecond wiring formed over the first transistor and second transistor,wherein the first transistor and the second transistor share the firstimpurity region, wherein a bottom surface of the first chalcogenide filmis electrically connected to the first impurity region, wherein a topsurface of the first chalcogenide film is electrically connected to thefirst wiring, and wherein the second impurity region and the thirdimpurity region are electrically connected to the second wiring.
 2. Asemiconductor device according to the claim 1, wherein the firstchalcogenide film includes Ge, Sb and Te.
 3. A semiconductor deviceaccording to the claim 1, wherein the first transistor includes a firstgate electrode formed over a semiconductor substrate, wherein the secondtransistor includes a second gate electrode formed over thesemiconductor substrate, and wherein each of the first gate electrodeand the second gate electrode includes a poly silicon film, a titaniumnitride film and a tungsten film, or a poly silicon film, a tungstennitride film and a tungsten film.
 4. A semiconductor device according tothe claim 1, further comprising: a third transistor including a fourthimpurity region formed in the semiconductor substrate and a fifthimpurity region formed in the semiconductor substrate; a fourthtransistor including the fourth impurity region and a sixth impurityregion formed in the semiconductor substrate; a second chalcogenide filmformed over the third transistor and the fourth transistor; a thirdwiring formed over the third transistor and the fourth transistor; andwherein the third transistor and the fourth transistor share the fourthimpurity region, wherein a bottom surface of the second chalcogenidefilm is electrically connected to the fourth impurity region, wherein atop surface of the second chalcogenide film is electrically connected tothe first wiring, and wherein the fifth impurity region and sixthimpurity region are electrically connected to the third wiring.
 5. Asemiconductor device according to the claim 4, further comprising: anelement isolation region formed by embedding an insulting film inside atrench formed in the semiconductor substrate, wherein the first impurityregion, the second impurity region and the third impurity region areseparated from the fourth impurity region, fifth impurity region and thesixth impurity region by the element isolation.
 6. A semiconductordevice according to the claim 4, further comprising: wherein the firstchalcogenide film and the second chalcogenide film are mutuallyconnected.
 7. A semiconductor device comprising: a first transistorincluding a first impurity region formed in the semiconductor substrateand a second impurity region formed in the semiconductor substrate; asecond transistor including the first impurity region and a thirdimpurity region formed in the semiconductor substrate; a firstchalcogenide film formed over the first transistor and secondtransistor; a first wiring formed over the first chalcogenide film andextending to a first direction; and a second wiring formed over thefirst wiring and extending to a second direction perpendicular to thefirst direction, wherein the first transistor and second transistor aredisposed in the second direction, wherein the first transistor and thesecond transistor share the first impurity region, wherein a bottomsurface of the first chalcogenide film is electrically connected to thefirst impurity region, wherein a top surface of the first chalcogenidefilm is electrically connected to the first wiring, and wherein thesecond impurity region and the third impurity region are electricallyconnected to the second wiring.
 8. A semiconductor device according tothe claim 7, wherein the chalcogenide film includes Ge, Sb and Te.
 9. Asemiconductor device according to the claim 7, wherein the firsttransistor includes a first gate electrode formed over a semiconductorsubstrate, wherein the second transistor includes a second gateelectrode formed over the semiconductor substrate, and wherein each ofthe first gate electrode and the second gate electrode includes a polysilicon film, a titanium nitride film and a tungsten film, or a polysilicon film, a tungsten nitride film and a tungsten film.
 10. Asemiconductor device according to the claim 7, further comprising: athird transistor including a fourth impurity region formed in thesemiconductor substrate and a fifth impurity region formed in thesemiconductor substrate; a fourth transistor including the fourthimpurity region and a sixth impurity region formed in the semiconductorsubstrate; a second chalcogenide film formed over the third transistorand the fourth transistor; a third wiring formed over the thirdtransistor and the fourth transistor and extending to the seconddirection; and wherein the third transistor and fourth transistor aredisposed in the second direction, wherein the third transistor and thefourth transistor share the fourth impurity region, wherein a bottomsurface of the second chalcogenide film is electrically connected to thefourth impurity region, wherein a top surface of the second chalcogenidefilm is electrically connected to the first wiring, wherein the fifthimpurity region and sixth impurity region are electrically connected tothe third wiring, and wherein the third wiring is formed of the samelayer as that of the second wiring.
 11. A semiconductor device accordingto the claim 10, further comprising: an element isolation region formedby embedding an insulting film inside a trench formed in thesemiconductor substrate, wherein the first impurity region, the secondimpurity region and the third impurity region are separated from thefourth impurity region, fifth impurity region and the sixth impurityregion by the element isolation.
 12. A semiconductor device according tothe claim 10, wherein the first chalcogenide film and the secondchalcogenide film are mutually connected and extending to the firstdirection.